SI4778DY, SI4778DY-T1-E3, SI4779CY Selling Leads, Datasheet
MFG:Vishay Package Cooled:SO-8 D/C:2010+
SI4778DY, SI4778DY-T1-E3, SI4779CY Datasheet download
Part Number: SI4778DY
MFG: Vishay
Package Cooled: SO-8
D/C: 2010+
MFG:Vishay Package Cooled:SO-8 D/C:2010+
SI4778DY, SI4778DY-T1-E3, SI4779CY Datasheet download
MFG: Vishay
Package Cooled: SO-8
D/C: 2010+
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PDF/DataSheet Download
Datasheet: Si4112
File Size: 730837 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: Si4112
File Size: 730837 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SI4779CY
File Size: 88378 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
The Si4779CY n-channel high-side switch combines a low rDS(on) MOSFET switch with a user set, pulse gate control (PGC) based current limit. This switch is designed to protect the system power supply from overloads and short circuit conditions in applications such as USB. The PGC based approach to the current limiter provides the additional benefit of keeping the MOSFET junction temperature within specification, thereby eliminating the need for thermal shutdown. The low quiescent current makes the Si4779CY ideal for use in battery powered devices. The Si4779CY operates on both 3-V and 5-V busses, and is packaged in the LITTLE FOOT SO-8 package.
Parameter | Symbol | Steady State | Unit | |
Voltage, IN to GND | VIN | 0.3 to 7 | V | |
Voltage, ON | VON | 0.3 to 7 | ||
Continuous Drain Current (TJ = 150C)a | TA = 25RC | ID | 2.4 | A |
TA = 85RC | 2.4 | |||
Maximum Power Dissipationa | TA = 70RC | PD | 0.65 | W |
Operating Junction and Storage Temperature Range | Tj, Tstg | 65 to 125 | °C |