Si4004DY

The Si4004DY is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as Low-Side MOSFET for Synchronous Buck: Game Machine and PC. Features of the Si4004DY are:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the Si4004DY can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150 °C): 12 to 8.8 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 4.2 to 2.1 A;(6)Maximum Power Dissipation: 5.0 W or 1.6 W;(7)Operating Junction and Storage Temperature Range: -55 to 150 °C.

The electrical characteristics of the Si4004DY can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 22 mV/;(3)VGS(th) Temperature Coefficient: -5.5 mV/;(4)Gate-Source Threshold Voltage: 1.2 to 2.5 V;(5)Gate-Source Leakage: ±100 nA;(6)Zero Gate Voltage Drain Current: 1 uA to 10 uA;(7)On-State Drain Current: 30 A;(8)Drain-Source On-State Resistance: 0.00115 to 0.00138 ;(9)Forward Transconductance: 25 S. If you want to know more information about the Si4004DY, please download the datasheet in www.seekic.com or www.chinaicmart.com .