SI4004DY-T1-GE3, US $ .26-.59, SI4004DY-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430790 Detail

SI4004DY-T1-GE3: MOSFET N-CH 20V 8-SOIC

SI4004DY-T1-GE3 Data Sheet

US $ .26~.59 / Piece | Get Latest Price

Part Number:: SI4004DY-T1-GE3
Mfg:
Supply Ability:: 5000

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Upload time: 2024/5/13

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What is this?

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DescriptionThe Si4004DY is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be ...
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Product Details

Quick Details

Series:	TrenchFET®	Manufacturer:	Vishay Siliconix
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	15.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	20V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	12A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	13.8 mOhm @ 11A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 250µA	Gate Charge (Qg) @ Vgs:	33nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1280pF @ 10V
Power - Max:	5W	Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)	Supplier Device Package:	8-SOICN

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Series: TrenchFET®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 12A
Power - Max: 5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOICN
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds: 1280pF @ 10V

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SI4004DY-T1-GE3

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