SI4920DYT, SI4920DY-T, SI4921DY Selling Leads, Datasheet
MFG:VISHAY Package Cooled:SO-8 D/C:08.09+
SI4920DYT, SI4920DY-T, SI4921DY Datasheet download
Part Number: SI4920DYT
MFG: VISHAY
Package Cooled: SO-8
D/C: 08.09+
SI4920DYT, SI4920DY-T, SI4921DY
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Info of SI4920DYT
Info of SI4920DY-T
Info of SI4921DY
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About Si4112
PDF/DataSheet Download
Datasheet: Si4112
File Size: 730837 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About Si4112
PDF/DataSheet Download
Datasheet: Si4112
File Size: 730837 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SI4921DY
PDF/DataSheet Download
Datasheet: SI4921DY
File Size: 46325 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
SI4921DY General Description
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125 temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SI4921DY Features
P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the -55 to 125 Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the -55 to 125 Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
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