MFG:850 Package Cooled:TO-200AB D/C:2009
SKM300GB124DE, SKM300GB124DH4E, SKM300GB125D Datasheet download
MFG: 850
Package Cooled: TO-200AB
D/C: 2009
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PDF/DataSheet Download
Datasheet: SKM100GA123D
File Size: 126075 KB
Manufacturer: SEMIKRON [Semikron International]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SKM100GA123D
File Size: 126075 KB
Manufacturer: SEMIKRON [Semikron International]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SKM300GB125D
File Size: 792589 KB
Manufacturer:
Download : Click here to Download
The SKM300GB125D is designed as ultra fast IGBT module. Its typical applications include switched mode power supplies at fSW>20KHz, rescont inverters up to 100KHz, slient AC motor speed control, inductive geating, slient UPS uninterruptable power supplies and electronic (also portable) welders.
It has many features. The first one is N-channel, homogeneous silicon structure (NPT - non punch-through IGBT). The second one is low inductance case. The third one is short tail current with low temperature dependence. The fourth one is high short circuit capability, self limiting. The fifth one is fast & soft inverse CAL diodes. The sixth one is isolated copper baseplate using DCB direct copper bonding technology. The seventh one is large clearance (10 mm) and creepage distances (20 mm). That are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. For the IGBT the first one is about its Vces which would be 1200V. The second one is about its Ic which would be 300 (210)A. The third one is about its Icrm which would be 400A. The fourth one is about its Vges which would be +/-20V. The fifth one is about its storage temperature range which would be from -40°C to +150°C. The sixth one is about its Visol which would be 4000V. For the inverse diode The first one is about its If which would be 260 (180)A. The second one is about its Ifrm which would be 400V. The third one is about its Ifsm which would be 2200A.
Also some characteristics about it. For the IGBT the first one is about its Vge(th) which would be min 4.5V and typ 5.5V and max 6.5V. The second one is about its Ices which would be typ 0.1mA and max 0.3mA. The third one is about its Vce(to) which would be typ 1.5 (1.7)V and max 1.75V. And so on. For more information please contact us.
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