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SM8JZ47, SM8JZ47A, SM8LC03

Table of contents:
Info of SM8JZ47
Info of SM8JZ47A
Info of SM8LC03

SM8JZ47, SM8JZ47A, SM8LC03 Selling Leads, Datasheet

MFG:Microsemi Category:Circuit Protection Package Cooled:TOS D/C:08+

SM8JZ47, SM8JZ47A, SM8LC03 Datasheet download

Five Points

Part Number: SM8JZ47

Category: Circuit Protection

MFG: Microsemi

Package Cooled: TOS

D/C: 08+

Description: TVS ARRAY BIDIR 3.3 VWM SO-8

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SM8JZ47 Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Repetitive Peak Off−State Voltage	SM8GZ47 SM8GZ47A	V_DRM	400	V
	SM8JZ47 SM8JZ47A		600
R.M.S On−State Current (Full Sine Waveform Tc = 83°C)		I_T(RMS)	8	A
Peak One Cycle Surge On-State Current (Non−Repetitive)		I_TSM	80 (50Hz)	A
			88 (60Hz)
I²t Limit Value		I²t	32	A²s
Critical Rate of Rise of On−State Current (Note 1)		di / dt	50	A/s
Peak Gate Power Dissipation		P_GM	5	W
Average Gate Power Dissipation		P_G(AV)	0.5	W
Peak Gate Voltage		V_GM	10	V
Peak Gate Current		I_GM	2	A
Junction Temperature		T_j	−40~125
Storage Temperature Range		T_stg	−40~125
Isolation Voltage (AC, t = 1min.)		V_ISOL	1500	V

Note 1: di / dt Test Condition
            V_DRM= 0.5*Rated
            I_TM 12A
          t_gw 10s
            t_gr 250ns
          iGP = I_GT*2.0

SM8JZ47 Features

·Repetitive Peak Off−State Voltage : V_DRM = 400, 600V
·R.M.S ON−State Current : I_{T (RMS)} = 8A
·High Commutating (dv / dt)
·Isolation Voltage : V_ISOL = 1500V AC

SM8JZ47A Maximum Ratings

CHARACTERISTIC		SYMBOL	RATING	UNIT
Repetitive Peak Off−State Voltage	SM8GZ47 SM8GZ47A	V_DRM	400	V
	SM8JZ47 SM8JZ47A		600
R.M.S On−State Current (Full Sine Waveform Tc = 83°C)		I_T(RMS)	8	A
Peak One Cycle Surge On-State Current (Non−Repetitive)		I_TSM	80 (50Hz)	A
			88 (60Hz)
I²t Limit Value		I²t	32	A²s
Critical Rate of Rise of On−State Current (Note 1)		di / dt	50	A/s
Peak Gate Power Dissipation		P_GM	5	W
Average Gate Power Dissipation		P_G(AV)	0.5	W
Peak Gate Voltage		V_GM	10	V
Peak Gate Current		I_GM	2	A
Junction Temperature		T_j	−40~125
Storage Temperature Range		T_stg	−40~125
Isolation Voltage (AC, t = 1min.)		V_ISOL	1500	V

Note 1: di / dt Test Condition
            V_DRM= 0.5*Rated
            I_TM 12A
          t_gw 10s
            t_gr 250ns
          iGP = I_GT*2.0

SM8JZ47A Features

·Repetitive Peak Off−State Voltage : V_DRM = 400, 600V
·R.M.S ON−State Current : I_{T (RMS)} = 8A
·High Commutating (dv / dt)
·Isolation Voltage : V_ISOL = 1500V AC

SM8LC03 Parameters

Technical/Catalog Information	SM8LC03
Vendor	Microsemi
Category	Circuit Protection
Package / Case	8-SOIC
Packaging	Tape & Reel (TR)
Polarization	2 Channel Array - Bidirectional
Power (Watts)	500W
Voltage - Reverse Standoff (Typ)	3.3V
Voltage - Breakdown	4V
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SM8LC03 SM8LC03 SM8LC03MSTR ND SM8LC03MSTRND SM8LC03MSTR

SM8LC03 General Description

This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packagedin an SO-8 configuration giving protection to 2 Bidirectional data orinterface lines. It is designed for use in applications where protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical fast transients (EFT) per IEC 1000-4-4 and effects of secondary lighting.

These TVS arrays have a peak power rating of 500 watts for an 8/20msec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS DRAM's, SRAM's, HCMOS, HSIC microprocessors, and I/O transceivers. The SM8LCXX product provides board level protection from static electricity and other induced voltage surges that can damage sensitive circuitry.

SM8LC03 Maximum Ratings

` Operating Temperatures: -550 to +1500
` Storage Temperature: -550 to +1500
` Peak Pulse Power: 500 Watts (8/20 sec, Figure 1)
` Pulse Repetition Rate: <.01%

SM8LC03 Features

· Protects up to 2 Bidirectional lines
· Surge protection Per IEC 1000-4-2, IEC 1000-4-4
· Provides electrically isolated protection
· SO-8 Packaging
· Low capacitance of 25 Pf per line pair

SM8LC03 Connection Diagram

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