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SPU04N60C2, SPU04N60C3, SPU04N60S5

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO D/C:07+pbfree

Part Number: SPU04N60C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO

D/C: 07+pbfree

Description: MOSFET N-CH 600V 4.5A TO-251

Price Break

1
10
100
1000

Unit Price

1.51000
1.31200
1.00930
.60555

Extended Price

1.51
13.12
100.93
605.55

(All prices are in USD)Prices for reference only

SPU04N60C2 Supplier

SPU04N60C2

MFG: INF/SIE Package Cooled: 05+ D/C: TO Qty: 3800

HK Green System LTD China

Contact: Ms.rena

Tel: 86-755-8279-1230

Adddate: 2010-03-19

SPU04N60C2

MFG: INFINEON Package Cooled: TO-251 D/C: 08+ Qty: 24950

STJ-TECH INTL'CO.,LTD China

Contact: Ms.Jenny Fu/George Ming

Tel: 86-755-8268-6456/8268-6500

Adddate: 2010-03-19

SPU04N60C2

MFG: INF/SIE Package Cooled: TO Qty: 3000 Note: Delivery

Golden Harbour Industry Limited China

Contact: Mr.sam

Tel: 86-755-83651739,83041561

Adddate: 2010-03-19

SPU04N60C2

MFG: INF/SIE Package Cooled: 9800 D/C: TO

Centerchip Technology co.,Ltd China

Contact: Ms.lisahuang

Tel: 86-755-83958497

Adddate: 2010-03-19

SPU04N60C2

MFG: INF/SIE Package Cooled: TO D/C: 07+pbfree Qty: 3800

Singo(HK)technology Co.,Limited China

Contact: Ms.zhang

Tel: 0086-0755-82817286

Adddate: 2010-03-19

SPU01N50M2

MFG: INFINEON Package Cooled: TO-251 D/C: 08+ Qty: 24950

STJ-TECH INTL'CO.,LTD China

Contact: Ms.Jenny Fu/George Ming

Tel: 86-755-8268-6456/8268-6500

Adddate: 2010-03-19

SPU01N60C3

MFG: INF/SIE Package Cooled: 05+ D/C: TO Qty: 3800

HK Green System LTD China

Contact: Ms.rena

Tel: 86-755-8279-1230

Adddate: 2010-03-19

About SPU04N60C2

PDF/DataSheet Download

Datasheet: SPU04N60C2

File Size: 147284 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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SPU02N60C3
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File Size: 257946 KB

SPU01N50M2
File Size: 90266 KB

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SPU01N60S5 Infineon Technologies - TO-251 - 09+

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SPU04N60S5 Supplier

SPU04N60S5

MFG: INF/SIE Package Cooled: 05+ D/C: TO Qty: 3800

HK Green System LTD China

Contact: Ms.rena

Tel: 86-755-8279-1230

Adddate: 2010-03-19

SPU04N60S5

MFG: INFINEON Qty: 15800

WELL-SOURCE COMPONENTS China

Contact: Ms.SUSIE CHEN

Tel: 86-755-28536689

Adddate: 2010-03-19

SPU04N60S5

MFG: INFINEON D/C: 07/08+ Qty: 68000

TACT (H.K.) Century Co., Limited China

Contact: Mr.Neo

Tel: 0086-0755-83014280

Adddate: 2010-03-19

SPU04N60S5

MFG: infineon Package Cooled: TO-251 D/C: 09+ Qty: 80000 Note: MOSFET

SOuthern International Electronics Ltd Hong

Contact: Mr.Jacky

Tel: 86-0755-83358995

Adddate: 2010-03-19

SPU04N60S5

MFG: INFINEON Package Cooled: P-TO251-3-1 D/C: `06+(pb-free) Qty: 9925 Note: new in stock

HY (HK) IC LIMITED China

Contact: Ms.Melody Chen/Julie Chen

Tel: 86-755-82535765

Adddate: 2010-03-19

SPU04N60S5

MFG: INFINEON Package Cooled: 02+ Qty: 4734 Note: Our stock,new "

Kailiyuan Technology International Co.,Ltd China

Contact: Mr. BillyYan

Tel: 86-755-82533677

Adddate: 2010-03-19

SPU04N60S5

MFG: INFINEON Package Cooled: TO-251 D/C: 08+ Qty: 24950

STJ-TECH INTL'CO.,LTD China

Contact: Ms.Jenny Fu/George Ming

Tel: 86-755-8268-6456/8268-6500

Adddate: 2010-03-19

SPU04N60S5

MFG: INF/SIE Package Cooled: TO Qty: 3000 Note: Delivery

Golden Harbour Industry Limited China

Contact: Mr.sam

Tel: 86-755-83651739,83041561

Adddate: 2010-03-19

About SPU04N60S5

PDF/DataSheet Download

Datasheet: SPU04N60S5

File Size: 274700 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

SPU02N60C3
File Size: 302006 KB

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File Size: 286618 KB

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File Size: 257946 KB

SPU02N60S5
File Size: 257946 KB

SPU01N50M2
File Size: 90266 KB

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SPU04N60C3 Supplier

SPU04N60C3

MFG: INF/SIE Package Cooled: 05+ D/C: TO Qty: 3800

HK Green System LTD China

Contact: Ms.rena

Tel: 86-755-8279-1230

Adddate: 2010-03-19

SPU04N60C3

Qty: 14700

WELL-SOURCE COMPONENTS China

Contact: Ms.SUSIE CHEN

Tel: 86-755-28536689

Adddate: 2010-03-19

SPU04N60C3

MFG: INFINEON Package Cooled: TO-251 D/C: 08+ Qty: 24950

STJ-TECH INTL'CO.,LTD China

Contact: Ms.Jenny Fu/George Ming

Tel: 86-755-8268-6456/8268-6500

Adddate: 2010-03-19

SPU04N60C3

MFG: INF/SIE Package Cooled: TO Qty: 3000 Note: Delivery

Golden Harbour Industry Limited China

Contact: Mr.sam

Tel: 86-755-83651739,83041561

Adddate: 2010-03-19

SPU04N60C3

MFG: INF/SIE Package Cooled: 9800 D/C: TO

Centerchip Technology co.,Ltd China

Contact: Ms.lisahuang

Tel: 86-755-83958497

Adddate: 2010-03-19

SPU04N60C3

MFG: INF/SIE Package Cooled: TO D/C: 07+pbfree Qty: 3800

Singo(HK)technology Co.,Limited China

Contact: Ms.zhang

Tel: 0086-0755-82817286

Adddate: 2010-03-19

SPU04N60C3

MFG: Infineon D/C: 07+ Qty: 10500 Note: same day shipment

Skyeast Intl. Ltd. China

Contact: Mr.RichardLiu

Tel: 86--755-83276226

Adddate: 2010-03-19

About SPU04N60C3

PDF/DataSheet Download

Datasheet: SPU04N60C3

File Size: 294097 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

Related PDF Download

SPU02N60C3
File Size: 302006 KB

SPU01N60C3
File Size: 286618 KB

SPU02N60
File Size: 257946 KB

SPU02N60S5
File Size: 257946 KB

SPU01N50M2
File Size: 90266 KB

Related Part Number

SPU02N60 Infineon Technologies - TO-251 - 09+

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SPUN194900 ALPS - switch -

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SPUSB1CJT Littelfuse Inc - switch -

SPU08N10 Infineon Technologies - 06+ - TO-251

SPU09P06PL Infineon Technologies - TO-251 - 08+

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SPU14N05 Infineon Technologies - 06+ - TO-251

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SPU31N05 Infineon Technologies - TO-251 - 08+

SPU04N60C2 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	9	A
Avalanche energy, single pulse I_D=3.6A, V_DD=50V	E_AS	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=4.5A, V_DD=50V	E_AR	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	A
Reverse diode dv/dt I_S=4.5A, V_DS < V_DD, di/dt=100A/μs, T_jmax=150°C	dv/dt	6	V/ns
Gate source voltage	V_GS	±20	V
Power dissipation, T_C = 25°C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU04N60C2 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity

SPU04N60C3 Parameters

Technical/Catalog Information	SPU04N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	490pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU04N60C3 SPU04N60C3 SPU04N60C3IN ND SPU04N60C3INND SPU04N60C3IN

SPU04N60C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	13.5	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=4.5A, V_DD=50V	E_AR	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU04N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

SPU04N60S5 Parameters

Technical/Catalog Information	SPU04N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	580pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22.9nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU04N60S5 SPU04N60S5 SPU04N60S5IN ND SPU04N60S5INND SPU04N60S5IN

SPU04N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	9	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=4.5A, V_DD=50V	E_AR	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 4.5A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU04N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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SPU04N60C2, SPU04N60C3, SPU04N60S5

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