SSS10N60B, SSS12N60B, SSS1408A-8Q Selling Leads, Datasheet
MFG:FAI Package Cooled:TO-220
SSS10N60B, SSS12N60B, SSS1408A-8Q Datasheet download
Part Number: SSS10N60B
MFG: FAI
Package Cooled: TO-220
D/C:
SSS10N60B, SSS12N60B, SSS1408A-8Q
- Table of contents:
Info of SSS10N60B
Info of SSS12N60B
Info of SSS1408A-8Q
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About SSS10N60B
PDF/DataSheet Download
Datasheet: SSS10N60B
File Size: 931064 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About SSS-002
PDF/DataSheet Download
Datasheet: SSS-002
File Size: 115553 KB
Manufacturer:
Download : Click here to Download
About SSS1408A-8Q
PDF/DataSheet Download
Datasheet: SSS1408A-8Q
File Size: 344890 KB
Manufacturer: AMD [Advanced Micro Devices]
Download : Click here to Download
SSS10N60B General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSS10N60B Maximum Ratings
| Symbol | Parameter | SSP10N60B | SSS10N60B | Units |
| VDSS | Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9.0 | 9.0* | A |
| 5.7 | 5.7 * | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 36 | 36 * | A |
| VGSS | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy(Note 2) | 520 | mJ | |
| IAR | Avalanche Current (Note 1) | 9.0 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 15.6 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
156 | 50 | W |
| 1.25 | 0.4 | W/°C | ||
| TJ, Tstg | Operating and Storage Temperature Range | -55 to +150 | °C | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | °C | |
SSS10N60B Features
• 9.0A, 600V, R DS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low gate charge ( typical 54 nC)
• Low Crss ( typical 32 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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