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SSS5N80, SSS5N80A, SSS-60MD-10

Table of contents:
Info of SSS5N80
Info of SSS5N80A
Info of SSS-60MD-10

SSS5N80, SSS5N80A, SSS-60MD-10 Selling Leads, Datasheet

MFG:FSC Package Cooled:TO-220 D/C:03+

SSS5N80, SSS5N80A, SSS-60MD-10 Datasheet download

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Part Number: SSS5N80

MFG: FSC

Package Cooled: TO-220

D/C: 03+

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SSS5N80 General Description

The SSS5N80 is a kind of N-channel power MOSFET.

There are some features as follows: (1)lower RDS(ON); (2)improved inductive ruggedness; (3)fast switching times; (4)rugged polysilicon gate cell structure; (5)lower input capacitance; (6)extended safe operating area; (7)improved high temperature reliability.

The following is about the absolute maximum ratings: (1)VDSS, drain-to-source voltage: 800 V; (2)ID, continuous drain current: 2.7 A at TC=25 and 1.9 A at TC=100; (3)IDM, drain current-pulsed: 20 A; (4)VGS, gate-to-source voltage: ±30 V; (5)EAS, single pulsed avalanche energy: 127 mJ; (6)IAS, avalanche current: 2.7 A; (7)drain-gate voltage (RGS=1.0 M): 800 V; (8)PD, total power dissipation (TC=25): 42 W; (9)TJ, Tstg, operating junction and storage temperature: -55 to +150; (10)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.

SSS5N80A General Description

The SSS5N80A is a kind of advanced power MOSFET.

There are some features as follows: (1)avalanche regged technology; (2)rugged gate oxide technology; (3)lower input capacitance; (4)improved gate charge; (5)extended safe operating area; (6)low leakage current: 25A (max) @ VDS=800 V; (7)low RDS(ON): 1.824 (typ).

The following is about the absolute maximum ratings: (1)VDSS, drain-to-source voltage: 800 V; (2)ID, continuous drain current: 3 A at TC=25 and 1.9 A at TC=100; (3)IDM, drain current-pulsed: 20 A; (4)VGS, gate-to-source voltage: ±30 V; (5)EAS, single pulsed avalanche energy: 336 mJ; (6)IAR, avalanche current: 3 A; (7)EAR, repetitive avalanche energy: 4.5 mJ; (8)dv/dt, peak diode recovery dv/dt: 2.0 V/ns; (9)PD, total power dissipation (TC=25): 45 W; (10)TJ, Tstg, operating junction and storage temperature: -55 to +150; (11)TL, maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300.

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