SST12LP15, SST12LP15A, SST12LP15A-OVCE Selling Leads, Datasheet
MFG:SST Package Cooled:QFN16 D/C:2008+
SST12LP15, SST12LP15A, SST12LP15A-OVCE Datasheet download
Part Number: SST12LP15
MFG: SST
Package Cooled: QFN16
D/C: 2008+
SST12LP15, SST12LP15A, SST12LP15A-OVCE
- Table of contents:
Info of SST12LP15
Info of SST12LP15A
Info of SST12LP15A-OVCE
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About SST12LP15
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Datasheet: SST12LP15
File Size: 202399 KB
Manufacturer: SST
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About SST12LP15A
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Datasheet: SST12LP15A
File Size: 202399 KB
Manufacturer: SST
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About SST
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Datasheet: SST
File Size: 83114 KB
Manufacturer:
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SST12LP15 General Description
The SST12LP15 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP15 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 35 dB gain with 26% poweradded efficiency @ POUT = 24 dBm for 802.11g and 29% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15 has excellent linearity, typically ~4% added EVM at 23.5 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 24+ dBm. SST12LP15 also has widerange (>25 dB), temperature-stable (~1 dB over 80°C), single- ended/differential power detectors which lower users' cost on power control.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <2 mA) makes the SST12LP15 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP15 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP15 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions.
SST12LP15 Maximum Ratings
Input power to pins 2 and 3 (PIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power (POUT). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 dBm
Supply Voltage at pins 5, 12, 14, 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +4.6V
Reference voltage to pins 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .500 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +85
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +120
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150
Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . . . ."with-Pb" units1: 240 for 3 seconds
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260 for 3 seconds
1. Certain "with-Pb" package types are capable of 260°C for 3 seconds; please consult the factory for the latest information.
SST12LP15 Features
• High Gain:
Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C
• High linear output power:
>29 dBm P1dB (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is recommended.)
Meets 802.11g OFDM ACPR requirement up to 25 dBm
Added EVM~4% up to 23.5 dBm for 54 Mbps 802.11g signal
Meets 802.11b ACPR requirement up to 25 dBm
• High power-added efficiency/Low operating current for both 802.11g/b applications
~26%/290 mA @ POUT = 24 dBm for 802.11g
~29%/340 mA @ POUT = 25 dBm for 802.11b
• Built-in Ultra-low IREF power-up/down control
IREF <2 mA
• Low idle current
~50 mA ICQ
• High-speed power-up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay included <200 ns
• High temperature stability
~1 dB gain/power variation between 0°C to +80°C
~1 dB detector variation over 0°C to +80°C
• Low shut-down current (< 0.1 A)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C
• High linear output power:
>29 dBm P1dB (Exceeding maximum rating of average output power, never measure with CW source! Pulsed single-tone source with <50% duty cycle is recommended.)
Meets 802.11g OFDM ACPR requirement up to 25 dBm
Added EVM~4% up to 23.5 dBm for 54 Mbps 802.11g signal
Meets 802.11b ACPR requirement up to 25 dBm
• High power-added efficiency/Low operating current for both 802.11g/b applications
~26%/290 mA @ POUT = 24 dBm for 802.11g
~29%/340 mA @ POUT = 25 dBm for 802.11b
• Built-in Ultra-low IREF power-up/down control
IREF <2 mA
• Low idle current
~50 mA ICQ
• High-speed power-up/down
Turn on/off time (10%~90%) <100 ns
Typical power-up/down delay with driver delay included <200 ns
• High temperature stability
~1 dB gain/power variation between 0°C to +80°C
~1 dB detector variation over 0°C to +80°C
• Low shut-down current (< 0.1 A)
• On-chip power detection
• 25 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
16-contact VQFN (3mm x 3mm)
Non-Pb (lead-free) packages available
SST12LP15 Typical Application
• WLAN (IEEE 802.11g/b)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
SST12LP15 Connection Diagram
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