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SST112

JFET 55V 5mA

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SeekIC No. : 00144830 Detail

SST112: JFET 55V 5mA

SST112 Data Sheet

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Part Number:
SST112
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Gate-Source Breakdown Voltage : - 35 V
Configuration : Single Mounting Style : SMD/SMT
Package / Case : SOT-23 (TO-236) Packaging : Can    

Description

Continuous Drain Current :
Drain Source Voltage VDS :
Drain Current (Idss at Vgs=0) :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : - 35 V
Packaging : Can
Package / Case : SOT-23 (TO-236)


Features:

· Low Cost
· Automated Insertion Package
· Low Insertion Loss
· No Offset or Error Voltage Generated By Closed Switch - Purely Resistive - High Isolation Resistance From Driver
· Fast Switching
· Short Sample and Hold Aperture Time




Application

· Analog Switches
· Choppers
· Commutators




Specifications

Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 50mA
Storage Temperature Range . . . . . . . . . . . -55oC to +150oC
Operating Temperature Range . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25oC . . . . . . . . . . . . . . . . . . .... . 3.3mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of the specifications i s not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.




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