MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:08+
STD100N03LT4, STD100N3LF3, STD100NH02L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-252
D/C: 08+
Description: MOSFET N-CH 30V 80A DPAK
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PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100NH02L
File Size: 523560 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STD100N03LT4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 2060pF @ 25V |
| Power - Max | 110W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD100N03LT4 STD100N03LT4 497 4749 1 ND 49747491ND 497-4749-1 |
| Technical/Catalog Information | STD100N3LF3 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 40A, 10V |
| Input Capacitance (Ciss) @ Vds | 2060pF @ 25V |
| Power - Max | 110W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD100N3LF3 STD100N3LF3 |
This Power MOSFET is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source voltage (VGS = 0) | 30 | V |
| ID (1) | Drain current (continuous) at TC = 25 | 80 | A |
| ID | Drain current (continuous) at TC = 100 | 70 | A |
| IDM (2) | Drain current (pulsed) | 320 | A |
| PTOT | Total dissipation at TC = 25 | 110 | W |
| Derating factor | 0.73 | W/ | |
| dv/dt (3) | Peak diode recovery voltage slope | 3.9 | V/ns |
| Tstg TJ |
Storage temperature Max. operating junction temperature |
-55 to 175 |
1. Current limited by package.
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 360 A/s, VDS V(BR)DSS, TJ TJMAX
| Type | VDSSS | RDS(on) | ID | Pw |
| STD100N3LF3 | 30 V | <0.0055 | 80 A(1) | 110 W |
| STU100N3LF3 | 30 V | <0.0055 | 80 A(1) | 110 W |
1. Current limited by package
100% avalanche tested
Logic level threshold
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 20 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k) | 20 | V |
| VGS | Gate- source Voltage | ± 20 | V |
| ID(#) | Drain Current (continuous) at TC = 25 | 60 | A |
| ID(#) | Drain Current (continuous) at TC = 100 | 60 | A |
| IDM(•) | Drain Current (pulsed) | 240 | A |
| Ptot | Total Dissipation at TC = 25 | 100 | W |
| Derating Factor | 0.67 | W/ | |
| EAS (1) | Single Pulse Avalanche Energy | 800 | mJ |
| Tstg | Storage Temperature | -55 to 175 | |
| Tj | Max. Operating Junction Temperature |
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