STD1955NL, STD19NE06, STD19NE06-1 Selling Leads, Datasheet
Package Cooled:TO-252 D/C:06+
STD1955NL, STD19NE06, STD19NE06-1 Datasheet download

Part Number: STD1955NL
MFG: --
Package Cooled: TO-252
D/C: 06+
Package Cooled:TO-252 D/C:06+
STD1955NL, STD19NE06, STD19NE06-1 Datasheet download

MFG: --
Package Cooled: TO-252
D/C: 06+
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PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD19NE06
File Size: 313755 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbasedprocess. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
19 |
A |
| ID | Drain Current (continuous) at TC = 100 |
13.5 |
A |
| IDM(`) | Drain Current (pulsed) |
76 |
A |
| Ptot | Total Dissipation at TC = 25 |
70 |
W |
| Derating Factor |
0.46 |
W/ | |
| EAS(1) | Single Pulse Avalanche Energy |
1.45 |
mJ |
| Tstg | Storage Temperature |
-55 to 175 |
|
| Tj | Max. Operating Junction Temperature |
