MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
STD2NM60, STD2NM60-1, STD2NM60T4 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 600V 2A DPAK
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PDF/DataSheet Download
Datasheet: STD2NM60
File Size: 486043 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STD2NM60-1
File Size: 486043 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
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The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS | Gate-Source Voltage |
±30 |
V |
| ID | Drain Current (continuous) at TC = 25 |
2 |
A |
| ID | Drain Current (continuous) at TC = 100 |
1.26 |
A |
| IDM(`) | Drain Current (pulsed) |
8 |
A |
| PTOT | Total Dissipation at TC = 25 |
46 |
W |
| Derating Factor |
0.37 |
W/ | |
| VESD(G-S) | Gate-source ESD(HBM-C=100pF, R=1.5k) |
1 |
kV |
| dv/dt(1) | Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg | Storage Temperature |
-65 to 150 |
|
| Tj | Operating Junction Temperature |
150 |
The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
600 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V |
| VGS | Gate-Source Voltage |
±30 |
V |
| ID | Drain Current (continuous) at TC = 25 |
2 |
A |
| ID | Drain Current (continuous) at TC = 100 |
1.26 |
A |
| IDM(`) | Drain Current (pulsed) |
8 |
A |
| PTOT | Total Dissipation at TC = 25 |
46 |
W |
| Derating Factor |
0.37 |
W/ | |
| VESD(G-S) | Gate-source ESD(HBM-C=100pF, R=1.5k) |
1 |
kV |
| dv/dt(1) | Peak Diode Recovery voltage slope |
15 |
V/ns |
| Tstg | Storage Temperature |
-65 to 150 |
|
| Tj | Operating Junction Temperature |
150 |
The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
| Technical/Catalog Information | STD2NM60T4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 46W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 8.4nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD2NM60T4 STD2NM60T4 |
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