STD3NK80, STD3NK80Z, STD3NK80Z-T4 Selling Leads, Datasheet
MFG:ST Package Cooled:TO251 D/C:09+
STD3NK80, STD3NK80Z, STD3NK80Z-T4 Datasheet download
Part Number: STD3NK80
MFG: ST
Package Cooled: TO251
D/C: 09+
STD3NK80, STD3NK80Z, STD3NK80Z-T4
- Table of contents:
Info of STD3NK80
Info of STD3NK80Z
Info of STD3NK80Z-T4
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About STD3NK80Z
PDF/DataSheet Download
Datasheet: STD3NK80Z
File Size: 623119 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STD3NK80Z
PDF/DataSheet Download
Datasheet: STD3NK80Z
File Size: 623119 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STD100N03L
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
STD3NK80Z General Description
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STD3NK80Z Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | ||
|
STP3NK80Z |
STF3NK80Z |
STD3NK80Z STD3NK80Z-1 |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | ||
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
800 |
V | ||
|
VGS |
Gate- source Voltage |
±30 |
V | ||
|
ID |
Drain Current (continuos) at TC = 25 |
2.5 |
2.5(*) |
2.5 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
1.57 |
1.57(*) |
1.57 |
A |
|
IDM (`) |
Drain Current (pulsed) |
10 |
10(*) |
10 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
70 |
25 |
70 |
W |
| Derating Factor |
0.56 |
0.2 |
0.56 |
W/ | |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
3000 |
V | ||
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
|
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
- |
V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|||
(`) Pulse width limited by safe operating area
(1) ISD 2.5A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
STD3NK80Z Features
` TYPICAL RDS(on) = 3.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY
STD3NK80Z Typical Application
· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING
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