STDID5B, STDNOPMC, STDPMC Selling Leads, Datasheet
MFG:ST Package Cooled:SOT252 D/C:2006
STDID5B, STDNOPMC, STDPMC Datasheet download
Part Number: STDID5B
MFG: ST
Package Cooled: SOT252
D/C: 2006
STDID5B, STDNOPMC, STDPMC
- Table of contents:
Info of STDID5B
Info of STDNOPMC
Info of STDPMC
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About STDID5B
PDF/DataSheet Download
Datasheet: STDID5B
File Size: 115875 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STD100N03L
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
About STD100N03L
PDF/DataSheet Download
Datasheet: STD100N03L
File Size: 514997 KB
Manufacturer: ST
Download : Click here to Download
STDID5B General Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STDID5B Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
55 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
55 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
ID(*) |
Drain Current (continuous) at TC = 25°C |
12 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
8 |
A |
|
IDM () |
Drain Current (pulsed) |
48 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
35 |
W |
|
|
Derating Factor |
0.23 |
W/°C |
|
EAS(1) |
Single Pulse Avalanche Energy |
25 |
mJ |
|
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
STDID5B Features
TYPICAL RDS(on) = 0.1 W
APPLICATION ORIENTED CHARACTERIZATION
ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
APPLICATION ORIENTED CHARACTERIZATION
ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
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