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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH(TM) IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short cir-cuit withstand capability.
STGB14NC60KD Maximum Ratings
Symbol
Parameter
Value
Unit
STGB14NC60KD STGP14NC60KD
STGF14NC60KD
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°(#)
25
11
A
IC
Collector Current (continuous) at TC = 100 (#)
14
7
A
ICM ( *)
Collector Current (pulsed)
50
A
IF
Diode RMS Forward Current at TC = 25
20
A
PTOT
Total Dissipation at TC = 25
80
25
W
Derating Factor
0.64
0.20
W/
VISO
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25)
--
2500
V
Tstg
Storage Temperature
55 to 150
Tj
Operating Junction Temperature
STGB14NC60KD Features
LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION
STGB14NC60KD Typical Application
HIGH FREQUENCY INVERTERS SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES MOTOR DRIVERS