MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:N/A D/C:TO-
STGB20NB41LZ, STGB20NB41LZT4, STGB3NB60FD Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: N/A
D/C: TO-
Description: IGBT N-CHAN 40A CLAMP D2PAK
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Datasheet: STGB20NB41LZ
File Size: 265003 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGB20NB41LZT4
File Size: 265003 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGB3NB60FD
File Size: 749643 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
CLAMPED |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
CLAMPED |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
40 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
20 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
80 |
A | |
|
Eas |
Single Pulse Energy Tc = 25°C |
700 |
mJ | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
200 |
W | |
| Derating Factor |
1.33 |
W/oC | ||
|
ESD |
ESD (Human Body Model) |
8 |
KV | |
|
Tstg |
Storage Temperature |
55 to 175 |
oC
| |
|
Tj |
Operating Junction Temperature | |||
| Technical/Catalog Information | STGB20NB41LZT4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Logic |
| Voltage - Collector Emitter Breakdown (Max) | 442V |
| Current - Collector (Ic) (Max) | 40A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 4.5V, 20A |
| Power - Max | 200W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGB20NB41LZT4 STGB20NB41LZT4 497 4351 2 ND 49743512ND 497-4351-2 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)
|
Symbol |
Parameter |
Value |
Unit | ||
| TO220/D2PAK | TO220FP | DPAK | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | ||
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | ||
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | ||
|
If (1) |
Forward Current |
3 |
A | ||
|
Ifm(1) |
Forward Current Pulsed |
24 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
68 |
25 |
60 |
W |
|
Derating Factor |
0.55 |
0.2 |
0.47 |
W/oC | |
|
VISO |
Insulation Withstand Voltage (AC) |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
oC
oC | ||
|
Tj |
Max.Operating Junction Temperature |
150 | |||
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