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STGB6NC60HDT4, STGB6NC60HT4, STGB7NB40LZ

Table of contents:
Info of STGB6NC60HDT4
Info of STGB6NC60HT4
Info of STGB7NB40LZ

STGB6NC60HDT4, STGB6NC60HT4, STGB7NB40LZ Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:D2PAK D/C:5600

STGB6NC60HDT4, STGB6NC60HT4, STGB7NB40LZ Datasheet download

Five Points

Part Number: STGB6NC60HDT4

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: D2PAK

D/C: 5600

Description: IGBT N-CH 600V 15A D2PAK

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STGB6NC60HDT4 Parameters

Technical/Catalog Information	STGB6NC60HDT4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	15A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGB6NC60HDT4 STGB6NC60HDT4 497 5110 2 ND 49751102ND 497-5110-2

STGB7NB40LZ General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

STGB7NB40LZ Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	CLAMPED	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	CLAMPED	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	14	A
R_G	Minimum External Gate Resistor	500	W
P_TOT	Total Dissipation at TC = 25°C	100	W
	Derating Factor	0.66	W/°C
E_CL	Single Pulse Collector to Emitter Avalanche Energy I_C= 13 A ; T_j= 150°C (see fig.1-2)	130	mJ
E_ECAV	Reverse Avalanche Energy I_C = 7 A ;f= 100 Hz ; T_c= 25°C	10	mJ
T_stg	Storage Temperature	55 to 150	^oC
T_j	Operating Junction Temperature	55 to 150	^oC

STGB7NB40LZ Features

POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE

STGB7NB40LZ Typical Application

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