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Using the latest high voltage technology based on a atented strip layout, STMicroelectronics has designed n advanced family of IGBTs, the Power- ESH™ IGBTs, with outstanding perfomances. he suffix "F" identifies a family optimized to chieve very low switching switching times for high requency applications (<40KHZ)
STGB7NB60FD Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14
A
IC
Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
Collector Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
80
W
Derating Factor
0.64
W/oC
Tstg
Storage Temperature
55 to 150
oC
Tj
Max.Operating Junction Temperature
150
oC
STGB7NB60FD Typical Application
MOTOR CONTROLS SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES