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STGD3NB60H, STGD3NB60HD, STGD3NB60K

Table of contents:
Info of STGD3NB60H
Info of STGD3NB60HD
Info of STGD3NB60K

STGD3NB60H, STGD3NB60HD, STGD3NB60K Selling Leads, Datasheet

MFG:ST Package Cooled:TO-220 D/C:01+

STGD3NB60H, STGD3NB60HD, STGD3NB60K Picture

STGD3NB60H, STGD3NB60HD, STGD3NB60K Datasheet download

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Part Number: STGD3NB60H

MFG: ST

Package Cooled: TO-220

D/C: 01+

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STGD3NB60H General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGD3NB60H Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	6	A
I_C	Collector Current (continuous) at Tc = 100 ^oC	3	A
I_CM(•)	Collector Current (pulsed)	24	A
P_tot	Total Dissipation at T_c= 25 ^oC	35	W
	Derating Factor	0.28	W/^oC
T_stg	Storage Temperature	-65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGD3NB60H Typical Application

HIGH FREQUENCY MOTOR CONTROLS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD3NB60HD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

STGD3NB60HD Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS = 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_C = 25°C	10	A
I_C	Collector Current (continuous) at T_C = 100°C	6	A
I_CM (`)	Collector Current (pulsed)	24	A
P_TOT	Total Dissipation at T_C = 25°C	50	W
	Derating Factor	0.4	W/°C
Tstg	Storage Temperature	55 to 150	°C
Tj	Operating Junction Temperature	55 to 150	°C

(`) Pulse width limited by safe operating area

STGD3NB60HD Features

·HIGH INPUT IMPEDANCE
·OFF LOSSES INCLUDE TAIL CURRENT
·LOW GATE CHARGE
·HIGH FREQUENCY OPERATION
·TYPICAL SHORT CIRCUIT WITHSTAND TIME 5micro S-family, 4 micro H family
·CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

STGD3NB60HD Typical Application

·HIGH FREQUENCY MOTOR CONTROLS
·SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD3NB60K General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

STGD3NB60K Maximum Ratings

Symbol	Parameter	Value			Unit
		TO-220 D2PAK	TO-220FP	DPAK
V_CES	Collector-Emitter Voltage (V_GS = 0)	600			V
V_ECR	Emitter-Collector Voltage	20			V
V_GE	Gate-Emitter Voltage	±20			V
I_C	Collector Current (continuos) at T_C = 25	6	6	6	A
I_C	Collector Current (continuos) at T_C = 100	3	3	3	A
I_CM ⁽⁾	Collector Current (pulsed)	24	24	24	A
I_f ⁽¹⁾	Forward Current	3			A
I_fm ⁽¹⁾	Forward Current Pulsed	24			A
P_TOT	Total Dissipation at T_C = 25	68	25	60	W
	Derating Factor	0.75			W/
V_ISO	Insulation Withstand Voltage A.C.	--	2500	--	V
T_stg	Storage Temperature	55 to 150 150
T_j	Max. Operating Junction Temperature	55 to 150 150

STGD3NB60K Features

· HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
· LOW ON-VOLTAGE DROP (V_cesat)
· LOW GATE CHARGE
· HIGH CURRENT CAPABILITY
· OFF LOSSES INCLUDE TAIL CURRENT
· HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED

STGD3NB60K Typical Application

· HIGH FREQUENCY MOTOR CONTROLS
· SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES

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