MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:IPAK TO-251; TO 252 DPAK D/C:07+
STGD5NB120SZ, STGD5NB120SZ-1, STGD5NB120SZT4 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: IPAK TO-251; TO 252 DPAK
D/C: 07+
Description: IGBT N-CHAN 10A 1200V DPAK
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Datasheet: STGD5NB120SZ
File Size: 358913 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGD5NB120SZ-1
File Size: 358913 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGD5NB120SZT4
File Size: 358913 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
1200 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
10 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
5 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
20 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
| Derating Factor |
0.44 |
W/oC | ||
|
Eas (1) |
Single Pulse Avalanche Energy at Tj = 25°C Single Pulse Avalanche Energy at Tj = 100°C |
10 |
mJ | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
|
Tj |
Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
1200 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
10 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
5 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
20 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
| Derating Factor |
0.44 |
W/oC | ||
|
Eas (1) |
Single Pulse Avalanche Energy at Tj = 25°C Single Pulse Avalanche Energy at Tj = 100°C |
10 |
mJ | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
|
Tj |
Operating Junction Temperature |
150 |
oC | |
| Technical/Catalog Information | STGD5NB120SZT4 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 10A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Power - Max | 75W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGD5NB120SZT4 STGD5NB120SZT4 497 4352 2 ND 49743522ND 497-4352-2 |
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