STGD7NB120S-1, STGD7NB60F, STGD7NB60H Selling Leads, Datasheet
MFG:ST Package Cooled:IPAK TO-251 D/C:TO-
STGD7NB120S-1, STGD7NB60F, STGD7NB60H Datasheet download
Part Number: STGD7NB120S-1
MFG: ST
Package Cooled: IPAK TO-251
D/C: TO-
STGD7NB120S-1, STGD7NB60F, STGD7NB60H
- Table of contents:
Info of STGD7NB120S-1
Info of STGD7NB60F
Info of STGD7NB60H
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About STGD7NB120S-1
PDF/DataSheet Download
Datasheet: STGD7NB120S-1
File Size: 44880 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STGD7NB60F
PDF/DataSheet Download
Datasheet: STGD7NB60F
File Size: 338365 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STGD7NB60H
PDF/DataSheet Download
Datasheet: STGD7NB60H
File Size: 335040 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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STGD7NB120S-1 General Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).
STGD7NB120S-1 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
1200 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
10 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
20 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
| Derating Factor |
0.4 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
STGD7NB120S-1 Typical Application
LIGHT DIMMER
INRUSH CURRENT LIMITATION
MOTOR CONTROL
INRUSH CURRENT LIMITATION
MOTOR CONTROL
STGD7NB60F General Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching times for frequency applications (<40KHZ)
STGD7NB60F Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
TO-220 |
DPAK | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
56 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
70 |
W |
| Derating Factor |
0.64 |
0.56 |
W/oC | |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
STGD7NB60F Typical Application
MOTOR CONTROLS
SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES
SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES
STGD7NB60H General Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
STGD7NB60H Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
56 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
| Derating Factor |
0.44 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
STGD7NB60H Typical Application
HIGH FREQUENCY MOTOR CONTROLS
SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
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