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STGD7NB60H-1, STGD7NB60K, STGD7NB60S

STGD7NB60H-1, STGD7NB60K, STGD7NB60S Selling Leads, Datasheet

MFG:ST  Package Cooled:09+  D/C:TO-

STGD7NB60H-1, STGD7NB60K, STGD7NB60S Picture

STGD7NB60H-1, STGD7NB60K, STGD7NB60S Datasheet download

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Part Number: STGD7NB60H-1

 

MFG: ST

Package Cooled: 09+

D/C: TO-

 

 

 
 
 
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About STGD7NB60H-1

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Datasheet: STGD7NB60H-1

File Size: 88671 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGD7NB60K

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Datasheet: STGD7NB60K

File Size: 727983 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGD7NB60S

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Datasheet: STGD7NB60S

File Size: 296275 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STGD7NB60H-1 General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGD7NB60H-1 Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14
A
IC
Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
Collector Current (pulsed)
56 
A
Ptot
Total Dissipation at Tc = 25 oC
55
W
Derating Factor
0.44
W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGD7NB60H-1 Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGD7NB60K General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

STGD7NB60K Maximum Ratings

Symbol
Parameter
Value
Unit
           
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

  VECR

 Emitter-Collector Voltage

 20

 V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C
14

 14

 14

A
IC
Collector Current (continuous) at TC = 125°C
7

 7

 7

A
ICM(•)
Collector Current (pulsed)
50

 50

 50

A
If (1)
Forward Current
7
A
Ifm (1)
 Forward Current Pulsed
56
A
 
Ptot
 Total Dissipation at Tc = 25 oC

 95

 30

 90

 W

   Derating Factor

 0.64

 0.28

 0.64

 
W/oC

 VISO

  Insulation Withstand Voltage A.C. 

 -- 

 2500

 --

 V

Tstg
Storage Temperature

55 to 150
150

oC
 
Tj
Max.Operating Junction Temperature

STGD7NB60K Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES

STGD7NB60S General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

STGD7NB60S Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
15
A
IC
Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
Collector Current (pulsed)
60
A
Ptot
Total Dissipation at Tc = 25 oC
55
W
Derating Factor
0.44
W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGD7NB60S Typical Application

 LIGHT DIMMER
 STATIC RELAYS
 MOTOR CONTROL

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