STGD7NB60H-1, STGD7NB60K, STGD7NB60S Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO-
STGD7NB60H-1, STGD7NB60K, STGD7NB60S Datasheet download
Part Number: STGD7NB60H-1
MFG: ST
Package Cooled: 09+
D/C: TO-
MFG:ST Package Cooled:09+ D/C:TO-
STGD7NB60H-1, STGD7NB60K, STGD7NB60S Datasheet download
MFG: ST
Package Cooled: 09+
D/C: TO-
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Datasheet: STGD7NB60H-1
File Size: 88671 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGD7NB60K
File Size: 727983 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGD7NB60S
File Size: 296275 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A | |
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
ICM(•) |
Collector Current (pulsed) |
56 |
A | |
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
Derating Factor |
0.44 |
W/oC | ||
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
Tj |
Max.Operating Junction Temperature |
150 |
oC |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
Symbol |
Parameter |
Value |
Unit | ||
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
VECR |
Emitter-Collector Voltage |
20 |
V | ||
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
IC |
Collector Current (continuous) at TC = 25°C |
14 |
14 |
14 |
A |
IC |
Collector Current (continuous) at TC = 125°C |
7 |
7 |
7 |
A |
ICM(•) |
Collector Current (pulsed) |
50 |
50 |
50 |
A |
If (1) |
Forward Current |
7 |
A | ||
Ifm (1) |
Forward Current Pulsed |
56 |
A | ||
Ptot |
Total Dissipation at Tc = 25 oC |
95 |
30 |
90 |
W |
Derating Factor |
0.64 |
0.28 |
0.64 |
W/oC | |
VISO |
Insulation Withstand Voltage A.C. |
-- |
2500 |
-- |
V |
Tstg |
Storage Temperature |
55 to 150 |
oC
| ||
Tj |
Max.Operating Junction Temperature |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).
Symbol |
Parameter |
Value |
Unit | |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
IC |
Collector Current (continuous) at Tc = 25 oC |
15 |
A | |
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
ICM(•) |
Collector Current (pulsed) |
60 |
A | |
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W | |
Derating Factor |
0.44 |
W/oC | ||
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
Tj |
Max.Operating Junction Temperature |
150 |
oC |