MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:05+ D/C:08+/09+
STGF20NB60S, STGF3NB60FD, STGF3NB60KDFP Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 05+
D/C: 08+/09+
Description: IGBT N-CHANNEL 600V 3A TO-220FP
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Datasheet: STGF20NB60S
File Size: 300122 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGF3NB60FD
File Size: 749643 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STG1700J-13Z
File Size: 540520 KB
Manufacturer:
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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz).
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
|
VECR |
Emitter-Collector Voltage |
20 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
IC |
Collector Current (continuous) at TC = 25°C (#) |
24 |
A |
|
IC |
Collector Current (continuous) at TC = 100°C (#) |
13 |
A |
|
ICM() |
Collector Current (pulsed) |
70 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
400 |
W |
| Derating Factor |
0.32 |
W/oC | |
|
VISO |
Insulation withstand voltage AC (t=1sec, Tc=25°C) |
2500 |
V |
|
Tstg |
Storage Temperature |
55 to 150 |
oC |
|
Tj |
Operating Junction Temperature |
oC |
| Technical/Catalog Information | STGF3NB60FD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
| Power - Max | 25W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STGF3NB60FD STGF3NB60FD 497 2651 5 ND 49726515ND 497-2651-5 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)
|
Symbol |
Parameter |
Value |
Unit | ||
| TO220/D2PAK | TO220FP | DPAK | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | ||
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | ||
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | ||
|
If (1) |
Forward Current |
3 |
A | ||
|
Ifm(1) |
Forward Current Pulsed |
24 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
68 |
25 |
60 |
W |
|
Derating Factor |
0.55 |
0.2 |
0.47 |
W/oC | |
|
VISO |
Insulation Withstand Voltage (AC) |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
oC
oC | ||
|
Tj |
Max.Operating Junction Temperature |
150 | |||
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