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STGF7NB60SL, STGF7NC60HD, STGL64

Table of contents:
Info of STGF7NB60SL
Info of STGF7NC60HD
Info of STGL64

STGF7NB60SL, STGF7NC60HD, STGL64 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-

STGF7NB60SL, STGF7NC60HD, STGL64 Datasheet download

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Part Number: STGF7NC60HD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 8000

D/C: TO-

Description: IGBT N-CHAN 10A 600V TO220FP

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STGF7NB60SL General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

STGF7NB60SL Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 oC	15	A
I_C	Collector Current (continuous) at T_c= 100 oC	7	A
I_CM(1)	Collector Current (pulsed)	20	A
P_tot	Total Dissipation at T_c= 25	25	W
	Derating Factor	0.2	W/^oC
V_ISO	Insulation Withstand Voltage A.C.	2500	V
T_stg	Storage Temperature	55 to 150	^oC
T_j	.Operating Junction Temperature	55 to 150	^oC

STGF7NB60SL Features

POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY

STGF7NB60SL Typical Application

LIGHT DIMMER
STATIC RELAYS

STGF7NC60HD Parameters

Technical/Catalog Information	STGF7NC60HD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	10A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Power - Max	25W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGF7NC60HD STGF7NC60HD 497 4354 5 ND 49743545ND 497-4354-5

STGF7NC60HD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

STGF7NC60HD Maximum Ratings

Symbol	Parameter	Value		Unit
		STGP7NC60HD STGB7NC60HD	STGF7NC60HD
V_CES	Collector-Emitter Voltage (V_GS= 0)	600		V
V_ECR	Emitter-Collector Voltage	20		V
V_GE	Gate-Emitter Voltage	± 20		V
I_C	Collector Current (continuous) at TC = 25°C (#)	25	10	A
I_C	Collector Current (continuous) at TC = 100°C (#)	14	6	A
I_CM(•)	Collector Current (pulsed)	50		A
I_F	Diode RMS Forward Current at TC = 25°C	20		A
P_tot	Total Dissipation at T_c= 25 ^oC	80	25	W
	Derating Factor	0.64	0.20	W/^oC
V_ISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--	2500	V
T_stg	Storage Temperature	55 to 150		^oC
T_j	Operating Junction Temperature	55 to 150		^oC

STGF7NC60HD Features

LOWER ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOSSES INCLUDE DIODE RECOVERY ENERGY
LOWER CRES/CIES RATIO
HIGH FREQUENCY OPERATION UP TO 70 KHz
VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE
NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

STGF7NC60HD Typical Application

HIGH FREQUENCY INVERTERS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
MOTOR DRIVERS

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