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STGP10NB60S, STGP10NB60SD, STGP10NB60SDFP

Table of contents:
Info of STGP10NB60S
Info of STGP10NB60SD
Info of STGP10NB60SDFP

STGP10NB60S, STGP10NB60SD, STGP10NB60SDFP Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:TO-

STGP10NB60S, STGP10NB60SD, STGP10NB60SDFP Datasheet download

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Part Number: STGP10NB60SD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 AB NON ISOL

D/C: TO-

Description: IGBT N-CHAN 600V 20A TO-220

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STGP10NB60S General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

STGP10NB60S Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	20	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	10	A
I_CM(•)	Collector Current (pulsed)	80	A
P_tot	Total Dissipation at T_c= 25 ^oC	80	W
	Derating Factor	0.64	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGP10NB60S Typical Application

LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL

STGP10NB60SD Parameters

Technical/Catalog Information	STGP10NB60SD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 10A
Power - Max	*
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP10NB60SD STGP10NB60SD 497 5008 5 ND 49750085ND 497-5008-5

STGP10NB60SD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH^TMIGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency application (<1kHz).

STGP10NB60SD Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES I_C Note 5 I_CNote 5 I_CM Note 1 V_GE P_TOT	Collector-Emitter Voltage (V_GS = 0) Collector Current (continuous) at T_C=25 Collector Current (continuous) at T_C=100 Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at T_C=25	600 20 10 80 ±20 31.5	V A A W A W
Tj	Operating Junction Temperature	-65 to 15
Tstg	Storage Temperature	-65 to 15

STGP10NB60SD Features

·HIGH CURRENT CAPABILITY
·HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

STGP10NB60SD Typical Application

·LIGHT DIMMER
·STATIC RELAYS
·MOTOR CONTROL

STGP10NB60SDFP General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

STGP10NB60SDFP Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	20	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	10	A
I_CM(•)	Collector Current (pulsed)	80	A
P_tot	Total Dissipation at T_c= 25 ^oC	30	W
	Derating Factor	0.2	W/^oC
V_ISO	Insulation Withstand Voltage A.C.(t = 1 sec; T_c= 25°C)	2500	V
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	175	^oC

STGP10NB60SDFP Features

HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT

STGP10NB60SDFP Typical Application

LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL

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