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STGP10NB60SFP, STGP10NC60H, STGP10NC60HD

Table of contents:
Info of STGP10NB60SFP
Info of STGP10NC60H
Info of STGP10NC60HD

STGP10NB60SFP, STGP10NC60H, STGP10NC60HD Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-

STGP10NB60SFP, STGP10NC60H, STGP10NC60HD Datasheet download

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Part Number: STGP10NC60HD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 8000

D/C: TO-

Description: IGBT N-CH 600V 20A TO-220

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STGP10NB60SFP General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

STGP10NB60SFP Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	20	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	10	A
I_CM(•)	Collector Current (pulsed)	80	A
P_tot	Total Dissipation at T_c= 25 ^oC	31.5	W
	Derating Factor	0.21	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGP10NB60SFP Typical Application

LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL

STGP10NC60H General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

STGP10NC60H Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES I_C⁽¹⁾	Collector-emitter voltage (V_GS = 0) Collector current (continuous) at T_C = 25	600 20	V A
I_C⁽¹⁾ I_CL⁽²⁾	Collector current (continuous) at T_C = 100 Collector current (pulsed)	10 40	A A
V_GE P_TOT	Gate-emitter voltage Total dissipation at T_C = 25	±20 60	V W
T_stg T_j	Storage temperature Operating junction temperature	55 to 150

1. Calculated according to the iterative formula:
T_JMAX T^C
IC(TC)= ------------------------------------------------------
R_THJ C * V_CESAT(MAX)(T_C, I_C)

2. V_clamp=480V, T_j=150, R_G=10, V_GE=15V

STGP10NC60H Features

Low on-voltage drop (V_cesat)
Low C_RES/ C_IES ratio (no cross-conduction susceptbility)
Very soft ultra fast recovery antiparallel diode

STGP10NC60H Typical Application

High frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
Motor drivers

STGP10NC60HD Parameters

Technical/Catalog Information	STGP10NC60HD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Power - Max	65W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP10NC60HD STGP10NC60HD 497 5118 5 ND 49751185ND 497-5118-5

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