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STGP10NC60K, STGP10NC60KD, STGP12NB60H

Table of contents:
Info of STGP10NC60K
Info of STGP10NC60KD
Info of STGP12NB60H

STGP10NC60K, STGP10NC60KD, STGP12NB60H Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 AB NON ISOL D/C:08+/09+

STGP10NC60K, STGP10NC60KD, STGP12NB60H Datasheet download

Five Points

Part Number: STGP10NC60KD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 AB NON ISOL

D/C: 08+/09+

Description: IGBT N-CH 600V 20A TO-220

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STGP10NC60KD Parameters

Technical/Catalog Information	STGP10NC60KD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	20A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Power - Max	60W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGP10NC60KD STGP10NC60KD 497 5120 5 ND 49751205ND 497-5120-5

STGP10NC60KD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

STGP10NC60KD Maximum Ratings

Symbol	Parameter	Value		Unit
		STGB10NC60KD STGP10NC60KD	STGF10NC60KD
V_CES	Collector-Emitter Voltage (V_GS = 0)	600		V
V_ECR	Emitter-Collector Voltage	200		V
V_GE	Gate-Emitter Voltage	±20		V
I_C	Collector Current (continuous) at TC = 25°C (#)	20	9	A
I_C	Collector Current (continuous) at TC = 100°C (#)	10	6	A
I_CM(`)	Collector Current (pulsed)	40		A
I_F	Diode RMS Forward Current at T_C = 25°C	10		A
P_TOT	Total Dissipation at T_C = 25°C	60	25	W
	Derating Factor	0.48	0.20	W/°C
V_ISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	-	2500	V
Tstg	Storage Temperature	55 to 150		°C
Tj	Operating Junction Temperature	55 to 150		°C

(`􀀀)Pulse width limited by max. junction temperature.

STGP10NC60KD Features

· LOWER ON-VOLTAGE DROP (Vcesat)
· OFF LOSSES INCLUDE TAIL CURRENT
· LOWER CRES / CIES RATIO
· SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY
· VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE
· NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION

STGP10NC60KD Typical Application

·HIGH FREQUENCY MOTOR CONTROLS
·SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
·MOTOR DRIVERS

STGP12NB60H General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGP12NB60H Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	24	A
I_C	Collector Current (continuous) at T_c= 100^oC	12	A
I_CM()	Collector Current (pulsed)	96	A
P_tot	Total Dissipation at T_c= 25 ^oC	100	W
	Derating Factor	0.8	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max. Operating Junction Temperature	150	^oC

STGP12NB60H Typical Application

HIGH FREQUENCY MOTOR CONTROLS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
UPS

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