STGP12NB60HD, STGP12NB60K, STGP12NB60KD Selling Leads, Datasheet
MFG:ST Package Cooled:8000 D/C:TO-
STGP12NB60HD, STGP12NB60K, STGP12NB60KD Datasheet download
Part Number: STGP12NB60HD
MFG: ST
Package Cooled: 8000
D/C: TO-
STGP12NB60HD, STGP12NB60K, STGP12NB60KD
- Table of contents:
Info of STGP12NB60HD
Info of STGP12NB60K
Info of STGP12NB60KD
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About STGP12NB60HD
PDF/DataSheet Download
Datasheet: STGP12NB60HD
File Size: 419383 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STGP12NB60K
PDF/DataSheet Download
Datasheet: STGP12NB60K
File Size: 222718 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STGP12NB60KD
PDF/DataSheet Download
Datasheet: STGP12NB60KD
File Size: 544275 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STGP12NB60HD General Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
STGP12NB60HD Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
24 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
12 |
A | |
|
ICM() |
Collector Current (pulsed) |
96 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
100 |
W | |
| Derating Factor |
0.8 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC | |
|
Tj |
Max. Operating Junction Temperature |
150 |
oC | |
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
30 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
18 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
60 |
A | |
|
Tsc |
Short Circuit Withstand |
10 |
ms | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
W | |
| Derating Factor |
1.0 |
W/oC | ||
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
STGP12NB60K Typical Application
HIGH FREQUENCY MOTOR CONTROLS
SMPS
UPS
SMPS
UPS
STGP12NB60KD General Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
STGP12NB60KD Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
|
VECR |
Emitter-Collector Voltage |
20 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
30 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
18 |
A |
|
ICM(•) |
Collector Current (pulsed) |
60 |
A |
|
Tsc |
Short Circuit Withstand |
10 |
ms |
|
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
W |
| Derating Factor |
1.0 |
W/oC | |
|
Tstg |
Storage Temperature |
65 to 150 |
oC |
|
Tj |
Operating Junction Temperature |
150 |
oC |
STGP12NB60KD Typical Application
HIGH FREQUENCY MOTOR CONTROLS
SMPS
UPS
SMPS
UPS
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