MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-
STGP3NB60, STGP3NB60F, STGP3NB60FD Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 8000
D/C: TO-
Description: IGBT N-CHANNEL 600V 3A TO-220
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Datasheet: STGP3NB60
File Size: 724939 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGP3NB60F
File Size: 749643 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP3NB60FD
File Size: 749643 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STGP3NB60F |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
| Power - Max | 68W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGP3NB60F STGP3NB60F 497 2653 5 ND 49726535ND 497-2653-5 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)
|
Symbol |
Parameter |
Value |
Unit | ||
| TO220/D2PAK | TO220FP | DPAK | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | ||
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | ||
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | ||
|
If (1) |
Forward Current |
3 |
A | ||
|
Ifm(1) |
Forward Current Pulsed |
24 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
68 |
25 |
60 |
W |
|
Derating Factor |
0.55 |
0.2 |
0.47 |
W/oC | |
|
VISO |
Insulation Withstand Voltage (AC) |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
oC
oC | ||
|
Tj |
Max.Operating Junction Temperature |
150 | |||
| Technical/Catalog Information | STGP3NB60FD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
| Power - Max | 68W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGP3NB60FD STGP3NB60FD 497 2652 5 ND 49726525ND 497-2652-5 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "F" identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)
|
Symbol |
Parameter |
Value |
Unit | ||
| TO220/D2PAK | TO220FP | DPAK | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | ||
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | ||
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | ||
|
If (1) |
Forward Current |
3 |
A | ||
|
Ifm(1) |
Forward Current Pulsed |
24 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
68 |
25 |
60 |
W |
|
Derating Factor |
0.55 |
0.2 |
0.47 |
W/oC | |
|
VISO |
Insulation Withstand Voltage (AC) |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
65 to 150 |
oC
oC | ||
|
Tj |
Max.Operating Junction Temperature |
150 | |||
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