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STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP

STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Selling Leads, Datasheet

MFG:ST  Package Cooled:TO220  D/C:TO220

STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Picture

STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Datasheet download

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Part Number: STGP3NB60H

 

MFG: ST

Package Cooled: TO220

D/C: TO220

 

 

 
 
 
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About STGP3NB60H

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Datasheet: STGP3NB60H

File Size: 89451 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGP3NB60HD

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Datasheet: STGP3NB60HD

File Size: 106764 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGP3NB60HDFP

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Datasheet: STGP3NB60HDFP

File Size: 106764 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STGP3NB60H General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGP3NB60H Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
6
A
IC
Collector Current (continuous) at Tc = 100 oC
3
A
ICM(•)
Collector Current (pulsed)
24
A
Ptot
Total Dissipation at Tc = 25 oC
70
W
Derating Factor
0.56
W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGP3NB60H Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGP3NB60HD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGP3NB60HD Maximum Ratings

Symbol
Parameter
Value
Unit
 STGP7NB60HD  STGP7NB60HDFP
VCES
Collector-Emitter Voltage (VGS = 0)
600

 600

V
VGE
Gate-Emitter Voltage
± 20
 
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
6

 6

A
IC
Collector Current (continuous) at Tc = 100 oC
3

 3

A
ICM(•)
Collector Current (pulsed)
24

 24

A
Ptot
Total Dissipation at Tc = 25 oC
70

 35

W
Derating Factor
0.56

 0.28

W/oC
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max.Operating Junction Temperature

150

oC

STGP3NB60HD Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGP3NB60HDFP General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGP3NB60HDFP Maximum Ratings

Symbol
Parameter
Value
Unit
 STGP7NB60HD  STGP7NB60HDFP
VCES
Collector-Emitter Voltage (VGS = 0)
600

 600

V
VGE
Gate-Emitter Voltage
± 20
 
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
6

 6

A
IC
Collector Current (continuous) at Tc = 100 oC
3

 3

A
ICM(•)
Collector Current (pulsed)
24

 24

A
Ptot
Total Dissipation at Tc = 25 oC
70

 35

W
Derating Factor
0.56

 0.28

W/oC
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max.Operating Junction Temperature

150

oC

STGP3NB60HDFP Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

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