STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Selling Leads, Datasheet
MFG:ST Package Cooled:TO220 D/C:TO220
STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Datasheet download

Part Number: STGP3NB60H
MFG: ST
Package Cooled: TO220
D/C: TO220
MFG:ST Package Cooled:TO220 D/C:TO220
STGP3NB60H, STGP3NB60HD, STGP3NB60HDFP Datasheet download

MFG: ST
Package Cooled: TO220
D/C: TO220
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PDF/DataSheet Download
Datasheet: STGP3NB60H
File Size: 89451 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP3NB60HD
File Size: 106764 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP3NB60HDFP
File Size: 106764 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
70 |
W | |
| Derating Factor |
0.56 |
W/oC | ||
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
| STGP7NB60HD | STGP7NB60HDFP | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
600 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
6 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
3 |
A |
|
ICM(•) |
Collector Current (pulsed) |
24 |
24 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
70 |
35 |
W |
| Derating Factor |
0.56 |
0.28 |
W/oC | |
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
| STGP7NB60HD | STGP7NB60HDFP | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
600 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
6 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
3 |
A |
|
ICM(•) |
Collector Current (pulsed) |
24 |
24 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
70 |
35 |
W |
| Derating Factor |
0.56 |
0.28 |
W/oC | |
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
