MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:8000 D/C:TO-
STGP3NB60S, STGP6NC60HD, STGP6NC60KD Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 8000
D/C: TO-
Description: IGBT N-CH 600V 15A TO-220
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Datasheet: STGP3NB60S
File Size: 421824 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGP6NC60HD
File Size: 86016 KB
Manufacturer: ST
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PDF/DataSheet Download
Datasheet: STG1700J-13Z
File Size: 540520 KB
Manufacturer:
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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
|
Symbol |
Parameter |
Value |
Unit | |
|
STGP3NB60S |
STGD3NB60S | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
| VECR | Reverse Battery Protection |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
6 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
3 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
24 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
65 |
45 |
W |
| Derating Factor |
0.32 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
| Technical/Catalog Information | STGP6NC60HD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 15A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 3A |
| Power - Max | 56W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGP6NC60HD STGP6NC60HD 497 5122 5 ND 49751225ND 497-5122-5 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
|
Symbol |
Parameter |
Value |
Unit | |
| D²PAK/I²PAK/TO-220 | TO-220FP | |||
|
VCES |
Collector-emitter voltage (VGS = 0) |
600 |
V | |
|
IC(1) |
Collector current (continuous) at TC = 25°C |
15 |
6 |
A |
|
IC(1) |
Collector current (continuous) at TC = 100°C |
7 |
3 |
A |
|
ICM(2) |
Collector current (pulsed) |
21 |
A | |
|
VGE |
Gate-emitter voltage |
±20 |
V | |
|
IF |
Diode RMS forward current at Tc=25°C |
10 |
A | |
|
PTOT |
Total dissipation at TC = 25°C |
56 |
20 |
W |
|
VISO |
Insulation withstand voltage A.C.(t=1sec;Tc=25°C) |
-- |
2500 |
|
|
Tstg |
Storage temperature |
55 to 150 |
°C | |
|
Tj |
Operating junction temperature | |||
|
TI |
Maximum lead temperature for soldering purpose (for 10sec. 1.6 mm from case) |
300 |
°C | |
1. Calculated according to the iterative formula::IC(TC)=TJMAX TC/RTHJ C * VCESAT(MAX)(TC, IC)
2. Pulse width limited by max junction temperature
| Type | VCES | VCE(sat)max @25°C |
IC @100°C |
| STGB6NC60HD |
600V |
<2.5V |
7A |
| STGB6NC60HD-1 |
600V |
<2.5V |
7A |
| STGP6NC60HD |
600V |
<2.5V |
7A |
| STGF6NC60HD |
600V |
<2.5V |
3A |
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