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STGP7NB60FD, STGP7NB60H, STGP7NB60HD

STGP7NB60FD, STGP7NB60H, STGP7NB60HD Selling Leads, Datasheet

MFG:ST  Package Cooled:8000  D/C:TO-

STGP7NB60FD, STGP7NB60H, STGP7NB60HD Picture

STGP7NB60FD, STGP7NB60H, STGP7NB60HD Datasheet download

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Part Number: STGP7NB60FD

 

MFG: ST

Package Cooled: 8000

D/C: TO-

 

 

 
 
 
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About STGP7NB60FD

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Datasheet: STGP7NB60FD

File Size: 517900 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGP7NB60H

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Datasheet: STGP7NB60H

File Size: 88643 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STGP7NB60HD

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Datasheet: STGP7NB60HD

File Size: 106394 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STGP7NB60FD General Description

Using the latest high voltage technology based on a atented strip layout, STMicroelectronics has designed n advanced family of IGBTs, the Power- ESH™ IGBTs, with outstanding perfomances. he suffix "F" identifies a family optimized to chieve very low switching switching times for high requency applications (<40KHZ)

STGP7NB60FD Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14
A
IC
Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
Collector Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
80
W
Derating Factor
0.64
W/oC
Tstg
Storage Temperature
55 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGP7NB60FD Typical Application

 MOTOR CONTROLS
 SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGP7NB60H General Description

Using the latest high voltage technology based n a patented strip layout, STMicroelectronics as designed an advanced family of IGBTs, the owerMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).

STGP7NB60H Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V

VECR

Emitter-Collector Voltage

20

V

VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14
A
IC
Collector Current (continuous) at Tc = 100 oC
7
A
ICM(•)
Collector Current (pulsed)
56
A
Ptot
Total Dissipation at Tc = 25 oC
80
W
Derating Factor
0.64
W/oC
Tstg
Storage Temperature
65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGP7NB60H Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH ND RESONANT TOPOLOGIES

STGP7NB60HD General Description

Using the latest high voltage technology based n a patented strip layout, STMicroelectronics as designed an advanced family of IGBTs, the werMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).

STGP7NB60HD Maximum Ratings

Symbol
Parameter
Value
Unit

 STGP7NB60HD

 STGP7NB60HDFP

VCES
Collector-Emitter Voltage (VGS = 0)
600

 600

V
VGE
Gate-Emitter Voltage
± 20
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14

 13

A
IC
Collector Current (continuous) at Tc = 100 oC
7

 6

A
ICM(•)
Collector Current (pulsed)
56

 56

A
Ptot
Total Dissipation at Tc = 25 oC
80

 35

W
Derating Factor
0.64

 0.28

W/oC
Tstg
Storage Temperature
-65 to 150
oC
 
Tj
Max.Operating Junction Temperature

150

 
oC

STGP7NB60HD Typical Application

 HIGH FREQUENCY MOTOR CONTROLS
 SMPS AND PFC IN BOTH HARD SWITCH ND RESONANT TOPOLOGIES

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