STGP7NB60FD, STGP7NB60H, STGP7NB60HD Selling Leads, Datasheet
MFG:ST Package Cooled:8000 D/C:TO-
STGP7NB60FD, STGP7NB60H, STGP7NB60HD Datasheet download

Part Number: STGP7NB60FD
MFG: ST
Package Cooled: 8000
D/C: TO-
MFG:ST Package Cooled:8000 D/C:TO-
STGP7NB60FD, STGP7NB60H, STGP7NB60HD Datasheet download

MFG: ST
Package Cooled: 8000
D/C: TO-
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PDF/DataSheet Download
Datasheet: STGP7NB60FD
File Size: 517900 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STGP7NB60H
File Size: 88643 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP7NB60HD
File Size: 106394 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based on a atented strip layout, STMicroelectronics has designed n advanced family of IGBTs, the Power- ESH™ IGBTs, with outstanding perfomances. he suffix "F" identifies a family optimized to chieve very low switching switching times for high requency applications (<40KHZ)
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
56 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
W | |
| Derating Factor |
0.64 |
W/oC | ||
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based n a patented strip layout, STMicroelectronics as designed an advanced family of IGBTs, the owerMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | |
|
VECR |
Emitter-Collector Voltage |
20 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A | |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A | |
|
ICM(•) |
Collector Current (pulsed) |
56 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
W | |
| Derating Factor |
0.64 |
W/oC | ||
|
Tstg |
Storage Temperature |
65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based n a patented strip layout, STMicroelectronics as designed an advanced family of IGBTs, the werMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
|
STGP7NB60HD |
STGP7NB60HDFP | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
600 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
13 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
6 |
A |
|
ICM(•) |
Collector Current (pulsed) |
56 |
56 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
35 |
W |
| Derating Factor |
0.64 |
0.28 |
W/oC | |
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
