MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220FP D/C:TO-
STGP7NB60HDFP, STGP7NB60K, STGP7NB60KD Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-220FP
D/C: TO-
Description: IGBT N-CHAN 25A 600V TO220
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PDF/DataSheet Download
Datasheet: STGP7NB60HDFP
File Size: 106394 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP7NB60K
File Size: 727983 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STGP7NB60KD
File Size: 727983 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Using the latest high voltage technology based n a patented strip layout, STMicroelectronics as designed an advanced family of IGBTs, the werMESH] IGBTs, with outstanding erfomances. The suffix "H" identifies a family ptimized to achieve very low switching times for igh frequency applications (<120kHz).
|
Symbol |
Parameter |
Value |
Unit | |
|
STGP7NB60HD |
STGP7NB60HDFP | |||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
600 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
± 20 |
V |
|
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
13 |
A |
|
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
6 |
A |
|
ICM(•) |
Collector Current (pulsed) |
56 |
56 |
A |
|
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
35 |
W |
| Derating Factor |
0.64 |
0.28 |
W/oC | |
|
Tstg |
Storage Temperature |
-65 to 150 |
oC
| |
|
Tj |
Max.Operating Junction Temperature |
150 |
oC | |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
|
Symbol |
Parameter |
Value |
Unit | ||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at TC = 25°C |
14 |
14 |
14 |
A |
|
IC |
Collector Current (continuous) at TC = 125°C |
7 |
7 |
7 |
A |
|
ICM(•) |
Collector Current (pulsed) |
50 |
50 |
50 |
A |
|
If (1) |
Forward Current |
7 |
A | ||
|
Ifm (1) |
Forward Current Pulsed |
56 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
95 |
30 |
90 |
W |
| Derating Factor |
0.64 |
0.28 |
0.64 |
W/oC | |
|
VISO |
Insulation Withstand Voltage A.C. |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| ||
|
Tj |
Max.Operating Junction Temperature | ||||
| Technical/Catalog Information | STGP7NB60KD |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 14A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 7A |
| Power - Max | 80W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STGP7NB60KD STGP7NB60KD 497 4112 5 ND 49741125ND 497-4112-5 |
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
|
Symbol |
Parameter |
Value |
Unit | ||
|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V | ||
|
VECR |
Emitter-Collector Voltage |
20 |
V | ||
|
VGE |
Gate-Emitter Voltage |
± 20 |
V | ||
|
IC |
Collector Current (continuous) at TC = 25°C |
14 |
14 |
14 |
A |
|
IC |
Collector Current (continuous) at TC = 125°C |
7 |
7 |
7 |
A |
|
ICM(•) |
Collector Current (pulsed) |
50 |
50 |
50 |
A |
|
If (1) |
Forward Current |
7 |
A | ||
|
Ifm (1) |
Forward Current Pulsed |
56 |
A | ||
|
Ptot |
Total Dissipation at Tc = 25 oC |
95 |
30 |
90 |
W |
| Derating Factor |
0.64 |
0.28 |
0.64 |
W/oC | |
|
VISO |
Insulation Withstand Voltage A.C. |
-- |
2500 |
-- |
V |
|
Tstg |
Storage Temperature |
55 to 150 |
oC
| ||
|
Tj |
Max.Operating Junction Temperature | ||||
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