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STGW40NC60WD, STGW50NB60H, STGW50NB60M

Table of contents:
Info of STGW40NC60WD
Info of STGW50NB60H
Info of STGW50NB60M

STGW40NC60WD, STGW50NB60H, STGW50NB60M Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 247 D/C:06+07+pb-free

STGW40NC60WD, STGW50NB60H, STGW50NB60M Datasheet download

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Part Number: STGW40NC60WD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 247

D/C: 06+07+pb-free

Description: MOSFET N-CHAN 650V 40A TO-247

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STGW40NC60WD Parameters

Technical/Catalog Information	STGW40NC60WD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Power - Max	250W
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGW40NC60WD STGW40NC60WD 497 5742 ND 4975742ND 497-5742

STGW40NC60WD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "W" identifies a family optimized for very high frequency application.

STGW40NC60WD Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-emitter voltage (V_GS = 0)	600	V
I_C⁽¹⁾	Collector current (continuous) at 25	70	A
I_C(¹⁾	Collector current (continuous) at 100	40	A
I_CL ⁽²⁾	Turn-off SOA minimum current	230	A
V_GE	Gate-emitter voltage	±20	V
I_F	Diode RMS forward current at T_C=25	15	A
P_TOT	Total dissipation at T_C = 25	250	W
T_stg	Operating junction temperature	55 to 150
T_j	Storage temperature	55 to 150
T_L	Maximum lead temperature for soldering purpose (1.6mm from case, for 10sec.)	300

1. Calculated according to the iterative formula:
I_C(T_C)= T_JMAX T_C/R_{THJ C} * V_CESAT(MAX)(T_C, I_C)
2. V_clamp = 480V , T_j = 150, R_G = 10, V_GE= 15V

STGW40NC60WD Features

· Low C_RES / C_IES ratio (no cross conduction susceptibility)
· High frequency operation
· Very soft ultra fast recovery anti parallel diod

STGW40NC60WD Typical Application

· High frequency inverters, UPS
· Motor drivers
· HF, SMPS and PFC in both hard switch and resonant topologies
· Welding

STGW50NB60H General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHÔ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGW50NB60H Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Emitter-Collector Voltage	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	100	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	50	A
I_CM(•)	Collector Current (pulsed)	400	A
P_tot	Total Dissipation at T_c= 25 ^oC	250	W
	Derating Factor	2	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGW50NB60H Typical Application

HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGW50NB60M General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power- MESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.

STGW50NB60M Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	100	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	50	A
I_CM(•)	Collector Current (pulsed)	400	A
P_tot	Total Dissipation at T_c= 25 ^oC	250	W
	Derating Factor	2	W/^oC
T_stg	Storage Temperature	65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGW50NB60M Typical Application

MOTOR CONTROL
WELDING EQUIPMENTS

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