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STGY50NB60, STGY50NB60HD, STGY50NC60WD

Table of contents:
Info of STGY50NB60
Info of STGY50NB60HD
Info of STGY50NC60WD

STGY50NB60, STGY50NB60HD, STGY50NC60WD Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-

STGY50NB60, STGY50NB60HD, STGY50NC60WD Datasheet download

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Part Number: STGY50NC60WD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 09+

D/C: TO-

Description: IGBT N-CH 110A 600V MAX247

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STGY50NB60HD General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

STGY50NB60HD Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	600	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	100	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	50	A
I_CM(•)	Collector Current (pulsed)	400	A
P_tot	Total Dissipation at T_c= 25 ^oC	250	W
	Derating Factor	2	W/^oC
T_stg	Storage Temperature	-65 to 150	^oC
T_j	Max.Operating Junction Temperature	150	^oC

STGY50NB60HD Typical Application

HIGH FREQUENCY MOTOR CONTROLS
WELDING EQUIPMENTS
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

STGY50NC60WD Parameters

Technical/Catalog Information	STGY50NC60WD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	110A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 40A
Power - Max	278W
Mounting Type	Through Hole
Package / Case	MAX247?
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGY50NC60WD STGY50NC60WD 497 7489 5 ND 49774895ND 497-7489-5

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