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STT30PF30L, STT3PF20L, STT3PF20V

Table of contents:
Info of STT30PF30L
Info of STT3PF20L
Info of STT3PF20V

STT30PF30L, STT3PF20L, STT3PF20V Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOT23-6 D/C:2007+

STT30PF30L, STT3PF20L, STT3PF20V Datasheet download

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Part Number: STT3PF20V

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOT23-6

D/C: 2007+

Description: MOSFET P-CH 20V 2.2A SOT23-6

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STT3PF20V Parameters

Technical/Catalog Information	STT3PF20V
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1A, 4.5V
Input Capacitance (Ciss) @ Vds	315pF @ 15V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.7nC @ 4.5V
Package / Case	SOT-23-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STT3PF20V STT3PF20V

STT3PF20V General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STT3PF20V Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	20	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	20	V
V_GS	Gate-Source Voltage	± 12	V
I_D	Drain Current (continuous) at T_c = 25	2.2	A
I_D	Drain Current (continuous) at T_c= 100	1.39	A
IDM(`)	Drain Current (pulsed)	8.8	A
P_TOT	Total Dissipation at T_c= 25	1.6	W

(•)Pulse width limited by safe operating area

STT3PF20V Typical Application

·DC-DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·CELLULAR

STT3PF20V Connection Diagram

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