MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOT23-6 D/C:05+/06+
STT5NF20V, STT5PF20V, STT774DB1 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOT23-6
D/C: 05+/06+
Description: MOSFET P-CH 20V 5A SOT23-6
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Datasheet: STT5NF20V
File Size: 234851 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STT5PF20V
File Size: 236642 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STT+5V
File Size: 129276 KB
Manufacturer:
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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 12 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3 |
A |
|
IDM(`) |
Drain Current (pulsed) |
20 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
| Technical/Catalog Information | STT5PF20V |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 412pF @ 15V |
| Power - Max | 1.6W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4.5nC @ 2.5V |
| Package / Case | SOT-23-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STT5PF20V STT5PF20V |
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 8 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.1 |
A |
|
IDM(`) |
Drain Current (pulsed) |
20 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
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