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Using the latest low voltage Epitaxial Planar technology based on interdigitated layout, STMicroelectronics has introduced the new "High Gain" Power bipolar transistor family, with outstanding performances. Its very low saturation voltage combined with the "high gain" characteristics make it ideal for all high efficiency low voltage switching applications.
STT818A Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
-30
V
VCEO
Collector-Emitter Voltage (IB = 0)
-30
V
VEBO
Emitter-Base Voltage (IC = 0)
-5
V
IC
Collector Current
-3
A
ICM
Collector Peak Current
-6
A
IB
Base Current
-0.2
A
IBM
Base Peak Current
-0.5
A
PTOT
Total Dissipation at Tc = 25
1.2
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
STT818A Typical Application
·POWER MANAGEMENT IN PORTABLE EQUIPMENTS ·SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS