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STTH1002CR, STTH1002CT, STTH1003S

Table of contents:
Info of STTH1002CR
Info of STTH1002CT
Info of STTH1003S

STTH1002CR, STTH1002CT, STTH1003S Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:I2PAK D/C:TO

STTH1002CR, STTH1002CT, STTH1003S Datasheet download

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Part Number: STTH1002CR

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: I2PAK

D/C: TO

Description: DIODE FAST 200V 8A TO-220AB

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STTH1002CR Parameters

Technical/Catalog Information	STTH1002CR
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	8A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 5A
Current - Reverse Leakage @ Vr	5A @ 200V
Reverse Recovery Time (trr)	25ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	STTH1002CR STTH1002CR 497 3539 5 ND 49735395ND 497-3539-5

STTH1002CR General Description

Dual center tap rectifier suited for Switch Mode Power Supplies and High frequency DC to DC converters.

Packaged in DPAK, D²PAK, TO-220AB, TO220-FPAB and I²PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

STTH1002CR Maximum Ratings

Symbol	Parameter				Value	Unit
V_RRM	Repetitive peak reverse voltage				200	V
I_F(RMS)	RMS forward current	TO-220AB / TO-220FPAB / I²PAK / D²PAK /			20	A
I_F(RMS)	RMS forward current	DPAK			10	A
I_F(AV)	Average forward current =0.5	TO-220AB / I²PAK / D²PAK / DPAK	Tc = 155°C	Per diode	5	A
			Tc = 150°C	Per device	10
			Tc = 135°C	Per diode	8
			Tc = 125°C	Per device	16
		TO-220FPAB	Tc = 140°C	Per diode	5
			Tc = 120°C	Per device	10
			Tc = 110°C	Per diode	8
			Tc = 75°C	Per device	16
I_FSM	Surge non repetitive forward current		tp = 10 ms Sinusoidal		50	A
T_stg	Storage temperature range				- 65 + 175	°C
T_j	Maximum operating junction temperature				175	°C

STTH1002CR Features

Suited for SMPS
Low losses
Low forward and reverse recovery times
Insulated package: TO-220FPAB
High junction temperature
Low leakage current

STTH1002CT Parameters

Technical/Catalog Information	STTH1002CT
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io) (per Diode)	8A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 5A
Current - Reverse Leakage @ Vr	5A @ 200V
Reverse Recovery Time (trr)	25ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STTH1002CT STTH1002CT 497 3540 5 ND 49735405ND 497-3540-5

STTH1002CT General Description

STTH1002CT Maximum Ratings

Symbol	Parameter				Value	Unit
V_RRM	Repetitive peak reverse voltage				200	V
I_F(RMS)	RMS forward current	TO-220AB / TO-220FPAB / I²PAK / D²PAK /			20	A
I_F(RMS)	RMS forward current	DPAK			10	A
I_F(AV)	Average forward current =0.5	TO-220AB / I²PAK / D²PAK / DPAK	Tc = 155°C	Per diode	5	A
			Tc = 150°C	Per device	10
			Tc = 135°C	Per diode	8
			Tc = 125°C	Per device	16
		TO-220FPAB	Tc = 140°C	Per diode	5
			Tc = 120°C	Per device	10
			Tc = 110°C	Per diode	8
			Tc = 75°C	Per device	16
I_FSM	Surge non repetitive forward current		tp = 10 ms Sinusoidal		50	A
T_stg	Storage temperature range				- 65 + 175	°C
T_j	Maximum operating junction temperature				175	°C

STTH1002CT Features

Suited for SMPS
Low losses
Low forward and reverse recovery times
Insulated package: TO-220FPAB
High junction temperature
Low leakage current

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