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STTH1506DI, STTH1506DPI, STTH1506TPI

Table of contents:
Info of STTH1506DI
Info of STTH1506DPI
Info of STTH1506TPI

STTH1506DI, STTH1506DPI, STTH1506TPI Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+

STTH1506DI, STTH1506DPI, STTH1506TPI Datasheet download

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Part Number: STTH1506DPI

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO-220

D/C: 06+

Description: DIODE HYP FAST TANDEM 600V TOP3I

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STTH1506DI Maximum Ratings

Symbol	Parameter			Value	Unit
V_RRM	Repetitive peak reverse voltage			600	V
I_F(RMS)	RMS forward current		TO-220AC Insulated TO-220AC	30	A
I_F(RMS)	RMS forward current		TO-220AC Insulated TO-220AC	24	A
I_F(AV)	Average forward current = 0.5	TO-220AC Insulated TO-220AC	Tc = 92°C Tc = 55°C	5.5	A
I_FSM	Surge non repetitive forward current	tp = 10 ms sinusoidal		0.5	A
T_stg	Maximum storage temperature range			-65 +175	°C
T_j	Maximum operating junction temperature			+175	°C

STTH1506DI Features

COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE.
ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS.
LOW INDUCTANCE, LOW CAPACITANCE, ALLOWS SIMPLIFIED LAYOUT.
INSULATED VERSION: TO-220AC
Insulated voltage = 2500 VRMS
Capacitance = 7 pF

STTH1506DPI Parameters

Technical/Catalog Information	STTH1506DPI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	15A
Voltage - Forward (Vf) (Max) @ If	3.6V @ 15A
Reverse Recovery Time (trr)	35ns
Current - Reverse Leakage @ Vr	20A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	DOP3I-2 Insulated (Straight Leads)
Packaging	Tube
Capacitance @ Vr, F	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STTH1506DPI STTH1506DPI 497 3240 5 ND 49732405ND 497-3240-5

STTH1506DPI General Description

The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dI_F/dt.

STTH1506DPI Maximum Ratings

Symbol	Parameter		Value	Unit
V_RRM	Repetitive peak reverse voltage		600	V
I_F(RMS)	RMS forward current		26	A
I_FRM	Surge non repetitive forward current	tp = 10ms sinusoidal	130	A
I_peak	Peak current waveform	= 0.15 Tc = 120°C	35	A
T_stg	Storage temperature range		- 65 to + 150	°C
T_j	Maximum operating junction temperature		150	°C

STTH1506DPI Features

ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS
DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES
INSULATION (2500V_RMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK
STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN
PACKAGE CAPACITANCE: C=16pF

STTH1506TPI Parameters

Technical/Catalog Information	STTH1506TPI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io) (per Diode)	15A
Voltage - Forward (Vf) (Max) @ If	3.6V @ 15A
Current - Reverse Leakage @ Vr	20A @ 600V
Reverse Recovery Time (trr)	16ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TOP-3 Insulated
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STTH1506TPI STTH1506TPI 497 7582 5 ND 49775825ND 497-7582-5

STTH1506TPI General Description

The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dI_F/dt.

STTH1506TPI Maximum Ratings

Symbol	Parameter		Value	Unit
V_RRM	Repetitive peak reverse voltage		600	V
I_F(RMS)	RMS forward current		26	A
I_FRM	Surge non repetitive forward current	tp = 10ms sinusoidal	130	A
T_stg	Storage temperature range		- 65 to + 150	°C
T_j	Maximum operating junction temperature		150	°C

STTH1506TPI Features

Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions.
Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks.
Internal ceramic insulated devices with equal thermal conditions for both 300V diodes.
Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink.
Matched diodes for typical PFC application without need for voltage balance network.
C = 7pF

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