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STTH2003CF, STTH2003CFP, STTH2003CG

Table of contents:
Info of STTH2003CF
Info of STTH2003CFP
Info of STTH2003CG

STTH2003CF, STTH2003CFP, STTH2003CG Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO

STTH2003CF, STTH2003CFP, STTH2003CG Datasheet download

Five Points

Part Number: STTH2003CG

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 09+

D/C: TO

Description: DIODE SECONDARY DUAL 300V D2PAK

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STTH2003CF General Description

Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC/DC converters.
Packaged in TO-220AB, ISOWATT220AB, TO-220FPAB, I2PAK or D2PAK, this device is especially intended for secondary rectification.

STTH2003CF Maximum Ratings

Symbol	Parameter				Value	Unit
V_RRM	Repetitive peak reverse voltage				300	V
I_F(AV)	RMS forward current				30	A
I_F(AV)	Average forward current d = 0.5	TO-220AB / D2PAK / I2PAK	Tc=140°C	per diode per device	10 20	A
		ISOWATT220AB	Tc=125°C
		TO-220FPAB	Tc=115°C
I_FSM	Surge non repetitive forward current		tp = 10 ms sinusoidal		110	A
P_ARM	Non repetitive avalanche current		tp = 1µs Tj = 25		5	A
T_stg	Storage temperature range				- 65 + 175
T_j	Maximum operating junction temperature				175

STTH2003CF Features

·COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
·ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY
·INSULATED PACKAGES: ISOWATT220AB, TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF

STTH2003CFP General Description

STTH2003CFP Maximum Ratings

Symbol	Parameter				Value	Unit
V_RRM	Repetitive peak reverse voltage				300	V
I_F(AV)	RMS forward current				30	A
I_F(AV)	Average forward current d = 0.5	TO-220AB / D2PAK / I2PAK	Tc=140°C	per diode per device	10 20	A
		ISOWATT220AB	Tc=125°C
		TO-220FPAB	Tc=115°C
I_FSM	Surge non repetitive forward current		tp = 10 ms sinusoidal		110	A
P_ARM	Non repetitive avalanche current		tp = 1µs Tj = 25		5	A
T_stg	Storage temperature range				- 65 + 175
T_j	Maximum operating junction temperature				175

STTH2003CFP Features

·COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
·ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY
·INSULATED PACKAGES: ISOWATT220AB, TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF

STTH2003CG Parameters

Technical/Catalog Information	STTH2003CG
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	300V
Current - Average Rectified (Io) (per Diode)	10A
Voltage - Forward (Vf) (Max) @ If	1.25V @ 10A
Current - Reverse Leakage @ Vr	20A @ 300V
Reverse Recovery Time (trr)	35ns
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STTH2003CG STTH2003CG

STTH2003CG General Description

STTH2003CG Maximum Ratings

Symbol	Parameter				Value	Unit
V_RRM	Repetitive peak reverse voltage				300	V
I_F(AV)	RMS forward current				30	A
I_F(AV)	Average forward current d = 0.5	TO-220AB / D2PAK / I2PAK	Tc=140°C	per diode per device	10 20	A
		ISOWATT220AB	Tc=125°C
		TO-220FPAB	Tc=115°C
I_FSM	Surge non repetitive forward current		tp = 10 ms sinusoidal		110	A
P_ARM	Non repetitive avalanche current		tp = 1µs Tj = 25		5	A
T_stg	Storage temperature range				- 65 + 175
T_j	Maximum operating junction temperature				175

STTH2003CG Features

·COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
·ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY
·INSULATED PACKAGES: ISOWATT220AB, TO-220FPAB Electric insulation: 2000VDC Capacitance: 12pF

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