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The STTH2L06 is using ST Turbo 2 600V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.
STTH2L06 Maximum Ratings
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward voltage
7
A
IF(AV)
Average forward current = 0.5
DO-41
Tl = 90
2
A
SMA
Tl = 100
2
SMB
Tl = 115
2
IFSM
Surge non repetitive forward current
DO-41
tp = 10ms sinusoidal
45
A
SMA / SMB
35
Tstg
Storage temperature range
-65 to + 175
Tj
Maximum operating junction temperature
175
STTH2L06 Features
Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature