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STTH803, STTH8030, STTH803D

Table of contents:
Info of STTH803
Info of STTH8030
Info of STTH803D

STTH803, STTH8030, STTH803D Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:D2PAK; DO 220 D/C:TO

STTH803, STTH8030, STTH803D Datasheet download

Five Points

Part Number: STTH803D

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: D2PAK; DO 220

D/C: TO

Description: DIODE SECONDARY 8A 300V TO-220AC

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STTH803D Parameters

Technical/Catalog Information	STTH803D
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	300V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1.25V @ 8A
Reverse Recovery Time (trr)	35ns
Current - Reverse Leakage @ Vr	20A @ 300V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220-2 (Straight Leads)
Packaging	Tube
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STTH803D STTH803D 497 7607 5 ND 49776075ND 497-7607-5

STTH803D General Description

Single Fast Recovery Epitaxial Diode suited for Switch Mode Power Supply and high frequency DC/DC converters.

Packaged in TO-220AC or D²PAK this device is especially intended for secondary rectification

STTH803D Maximum Ratings

Symbol	Parameter		Value	Unit
V_RRM	Repetitive peak reverse voltage		300	V
I_F(RMS)	RMS forward current		20	A
I_F(AV)	Average forward current	Tc = 150°C = 0.5	8	A
I_FSM	Surge non repetitive forward current	tp = 10ms sinusoidal	100	A
I_RSM	Non repetitive avalanche current	tp = 20 ms square	4	A
T_stg	Storage temperature range		- 65 to + 175	°C
T_j	Maximum operating junction temperature		175	°C

STTH803D Features

COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY

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