MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:04+
STTH806CT, STTH806D, STTH806DIRG Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-220
D/C: 04+
Description: DIODE ULT FAST 600V 8A TO-220AC
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Datasheet: STTH806CT
File Size: 69957 KB
Manufacturer: STMicro
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PDF/DataSheet Download
Datasheet: STTH806D
File Size: 92369 KB
Manufacturer: STMicro
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PDF/DataSheet Download
Datasheet: STT+5V
File Size: 129276 KB
Manufacturer:
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|
Symbol |
Parameter |
Value
|
Unit | ||
|
VRRM |
Repetitive peak reverse voltage |
600 |
V | ||
|
IF(RMS) |
RMS forward current |
20
|
A | ||
|
IF(AV) |
Average forward current | Tc = 138°C = 0.5 |
Per diode Per device |
4 |
A |
|
8 | |||||
|
IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
35 |
A | |
|
Tstg
|
storage temperature range |
-65 +175 |
°C
| ||
|
Tj |
Maximum operating junction temperature |
+175 |
°C | ||
·COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE.
·ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS.
·LOW INDUCTANCE, ALLOWS SIMPLIFIED LAYOUT.
| Technical/Catalog Information | STTH806D |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.85V @ 8A |
| Reverse Recovery Time (trr) | 55ns |
| Current - Reverse Leakage @ Vr | 8A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220-2 (Straight Leads) |
| Packaging | Tube |
| Capacitance @ Vr, F | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STTH806D STTH806D |
|
Symbol |
Parameter |
Value
|
Unit | ||
|
VRRM |
Repetitive peak reverse voltage |
600 |
V | ||
|
IF(RMS) |
RMS forward current |
20
|
A | ||
|
IF(AV) |
Average forward current = 0.5 |
TO-220AC ISOWATT220AC |
Tc = 110°C Tc = 60°C |
8 |
A |
|
IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
50 |
A | |
|
Tstg |
storage temperature range |
-65 +175 |
°C
| ||
|
Tj |
Maximum operating junction temperature |
+175 |
°C | ||
·COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE.
·ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS.
·LOW INDUCTANCE, LOW CAPACITANCE (ISOWATT220AC = 12 pF), ALLOWS SIMPLIFIED LAYOUT.
| Technical/Catalog Information | STTH806DIRG |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.85V @ 8A |
| Reverse Recovery Time (trr) | 55ns |
| Current - Reverse Leakage @ Vr | 8A @ 600V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-220-2 Insulated (Straight Leads) |
| Packaging | Tube |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STTH806DIRG STTH806DIRG 497 7608 5 ND 49776085ND 497-7608-5 |
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