SW2DAZ-M1-4, SW2N60, SW303238 Selling Leads, Datasheet
MFG:MIT Package Cooled:ZIP4 D/C:N/A
SW2DAZ-M1-4, SW2N60, SW303238 Datasheet download
Part Number: SW2DAZ-M1-4
MFG: MIT
Package Cooled: ZIP4
D/C: N/A
SW2DAZ-M1-4, SW2N60, SW303238
- Table of contents:
Info of SW2DAZ-M1-4
Info of SW2N60
Info of SW303238
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About SW200
PDF/DataSheet Download
Datasheet: SW200
File Size: 328935 KB
Manufacturer:
Download : Click here to Download
About SW2N60
PDF/DataSheet Download
Datasheet: SW2N60
File Size: 522338 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SW313
PDF/DataSheet Download
Datasheet: SW313
File Size: 226016 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
SW2N60 General Description
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It's typical application is TV and monitor.
SW2N60 Maximum Ratings
| Symbol | Parameter | Value | Units | |
| TO-220 | TO-251(2) | |||
| VDSS | Drain to Source Voltage | 600 | V | |
| ID | Continuous Drain Current (@Tc=25) | 2.0 | 1.8 | A |
| Continuous Drain Current (@Tc=100) | 1.67 | 1.47 | A | |
| IDM | Drain Current Pulsed (Note 1) | 8.0 | 7.2 | A |
| VGS | Gate to Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 110 | mJ | |
| EAR | Repetitive Avalanche Energy (Note 1) | 5.0 | 4.2 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.0 | V/ns | |
| P D | Total Power Dissipation (@Tc=25) | 50 | 42 | W |
| Derating Factor above 25 | 0.4 | 0.34 | W/ | |
| TSTG,TJ | Operating junction temperature &Storage temperature | -55~+150 | ||
| TL | aximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. | 300 | ||
NOTES1. Repeativity rating: pulse width limited by junction temperature
2. L=62.2mH,IAS=1.8A,VDD=50V,RG=0ohm, Starting TJ=25
3. ISD1.8A,di/dt100A/us,VDDBVDSS, Starting TJ=25
SW2N60 Features
N-Channel MOSFET
BVDSS(Minimum)
RDS(ON)(Maximum)
ID
Qg(Typical)
PD(@TC=25 )
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