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SW2N60

Features: N-Channel MOSFET􀁺BVDSS(Minimum) 􀁺RDS(ON)(Maximum) 􀁺ID􀁺Qg(Typical) 􀁺PD(@TC=25 )Specifications Symbol Parameter Value Units TO-220 TO-251(2) VDSS Drain to Source Voltage 600 V ID Continuous Drain Current (@Tc=25) 2.0 1.8 ...

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SeekIC No. : 004509637 Detail

SW2N60: Features: N-Channel MOSFET􀁺BVDSS(Minimum) 􀁺RDS(ON)(Maximum) 􀁺ID􀁺Qg(Typical) 􀁺PD(@TC=25 )Specifications Symbol Parameter Value Units TO-220 TO...

SW2N60 Data Sheet

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Part Number:
SW2N60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

N-Channel MOSFET􀁺
BVDSS(Minimum) 􀁺
RDS(ON)(Maximum) 􀁺
ID􀁺
Qg(Typical) 􀁺
PD(@TC=25 )




Specifications

Symbol Parameter Value Units
TO-220 TO-251(2)
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current (@Tc=25) 2.0 1.8 A
Continuous Drain Current (@Tc=100) 1.67 1.47 A
IDM Drain Current Pulsed (Note 1) 8.0 7.2 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 110 mJ
EAR Repetitive Avalanche Energy (Note 1) 5.0 4.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns
P D Total Power Dissipation (@Tc=25) 50 42 W
Derating Factor above 25 0.4 0.34 W/
TSTG,TJ Operating junction temperature &Storage temperature -55~+150
TL aximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300


NOTES1. Repeativity rating: pulse width limited by junction temperature
2. L=62.2mH,IAS=1.8A,VDD=50V,RG=0ohm, Starting TJ=25
3. ISD1.8A,di/dt100A/us,VDDBVDSS, Starting TJ=25




Description

This power MOSFET SW2N60 is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET SW2N60 is usually used at high efficient DC to DC converter block and SMPS. It's typical application is TV and monitor.




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