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The TC55VCM216ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM216ASTN can be used in environments exhibiting extreme temperature conditions. The TC55VCM216ASTN is available in a plastic 48-pin thin-small-outline package (TSOP).
TC55VCM216ASTN40 Maximum Ratings
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
−0.3~4.2
V
VIN
Input Voltage
−0.3*~4.2
V
VI/O
Input/Output Voltage
−0.5~VDD + 0.5
V
PD
Power Dissipation
0.6
W
Tsolder
Soldering Temperature (10s)
260
℃
Tstg
Storage Temperature
−55~150
℃
Topr
Operating Temperature
−40~85
℃
*: −2.0 V when measured at a pulse width of 20ns
TC55VCM216ASTN40 Features
• Low-power dissipation Operating: 9 mW/MHz (typical) • Single power supply voltage of 2.3 to 3.6 V • Power down features usingCE1 and CE2 • Data retention supply voltage of 1.5 to 3.6 V • Direct TTL compatibility for all inputs and outputs • Wide operating temperature range of −40° to 85°C • Standby Current (maximum):