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TE28F200CVT60, TE28F200CVT80, TE28F256J3C125

Table of contents:
Info of TE28F200CVT60
Info of TE28F200CVT80
Info of TE28F256J3C125

TE28F200CVT60, TE28F200CVT80, TE28F256J3C125 Selling Leads, Datasheet

MFG:INTEL Package Cooled:TSOP48 D/C:08+/09+

TE28F200CVT60, TE28F200CVT80, TE28F256J3C125 Picture

TE28F200CVT60, TE28F200CVT80, TE28F256J3C125 Datasheet download

Five Points

Part Number: TE28F200CVT60

MFG: INTEL

Package Cooled: TSOP48

D/C: 08+/09+

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TE28F200CVT80 Maximum Ratings

Commercial Operating Temperature
During Read .............................. 0 to +70
During Block Erase
and Word/Byte Program ............ 0 to +70
Temperature Under Bias ....... 10 to +80
Extended Operating Temperature
During Read .......................... 40 to +85
During Block Erase
and Word/Byte Program ........ 40 to +85
Temperature Under Bias ....... 40 to +85
Storage Temperature............65 to +125
Voltage on Any Pin
(except V_CC, V_PP, A₉ and RP#)
with Respect to GND ........... 2.0 V to +7.0 V(2)
Voltage on Pin RP# or Pin A9
with Respect to GND ....... 2.0 V to +13.5 V(2,3)
V_PP Program Voltage with Respect
to GND during Block Erase
and Word/Byte Program .. 2.0 V to +14.0 V(2,3)
V_CC Supply Voltage
with Respect to GND ........... 2.0 V to +7.0 V(2)
Output Short Circuit Current..............100 mA (4)

NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is 0.5 V on input/output pins. During transitions, this level may undershoot to 2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is V_CC + 0.5 V which, during transitions, may overshoot to V_CC + 2.0 V for periods <20 ns.
3. Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns. Maximum DC voltage on RP# or A9 may overshoot to 13.5 V for periods <20 ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.

TE28F200CVT80 Features

` Intel SmartVoltage Technology
- 5 V or 12 V Program/Erase
- 3.3 V or 5 V Read Operation
` Very High-Performance Read
- 5 V: 60 ns Access Time
- 3 V: 110 ns Access Time
` Low Power Consumption
- Max 60 mA Read Current at 5 V
- Max 30 mA Read Current at 3.3 V3.6 V
` x8/x16-Selectable Input/Output Bus
- 28F200 for High Performance 16- or 32-bit CPUs
` x8-Only Input/Output Architecture
- 28F002B for Space-Constrained 8-bit Applications
` Optimized Array Blocking Architecture
- One 16-KB Protected Boot Block
- Two 8-KB Parameter Blocks
- 96-KB and 128-KB Main Blocks
- Top or Bottom Boot Locations
` Extended Temperature Operation
- 40 °C to +85 °C
`Extended Block Erase Cycling
- 100,000 Cycles at Commercial Temp
- 10,000 Cycles at Extended Temp
` Automated Word/Byte Program and Block Erase
- Command User Interface
- Status Registers
- Erase Suspend Capability
` SRAM-Compatible Write Interface
` Automatic Power Savings Feature
` Reset/Deep Power-Down Input
- 0.2 A ICCTypical
- Provides Reset for Boot Operations
` Hardware Data Protection Feature
- Absolute Hardware-Protection for Boot Block
- Write Lockout during Power Transitions
` Industry-Standard Surface Mount Packaging
- 40-, 48-, 56-Lead TSOP
- 44-Lead PSOP
` Footprint Upgradeable to 4-Mbit and 8-Mbit Boot Block Flash Memories
` ETOX™ IV Flash Technology

TE28F200CVT80 Connection Diagram

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